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STS10NH3LL

STMicroelectronics

STS10NH3LL by STMicroelectronics

STS10NH3LL by STMicroelectronics is a single N-channel FET designed for efficient switching applications. It features a max drain current of 10 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,385 parts In-Stock

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3,385

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Anansix

USA . 2,716 parts In-Stock

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2,716

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Digiode

USA . 399 parts In-Stock

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399

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,029 parts In-Stock

1+ parts

$1.149

100+ parts

-

1k+ parts

$1.034

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1,029

$1.149

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$1.034

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MKK Technologies

India . 1,404 parts In-Stock

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$2.161

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1,404

$2.161

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DigiPath Technology Company

USA . 1,404 parts In-Stock

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$2.161

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1,404

$2.161

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Corphita

USA . 2,979 parts In-Stock

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2,979

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Parana Technologies

USA . 177 parts In-Stock

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$1.374

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177

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$1.374

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Overview

Unlock unparalleled efficiency and reliability with the STS10NH3LL from STMicroelectronics, a leader in semiconductor innovation. This N-channel small signal FET is designed for seamless switching applications, boasting superior thermal performance and low on-resistance for optimal power management. Its compact surface-mount design makes integration effortless, ensuring your projects achieve heightened performance without compromising space. Trust in STMicroelectronics for quality that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers good durability and resistance to various environmental factors, making it suitable for reliable use in small electronic devices.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally allow for better performance in terms of switching speed and conduction efficiency, making this product ideal for high-speed applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against back EMF and improves circuit reliability, making this FET a versatile choice for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently control power in a wide range of electronic circuits.

Surface Mount: YES

Surface mount technology enables compact design and reduces board space, which is paramount in modern electronics.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V allows for safe operation in various applications without the risk of damage under normal conditions.

Package Shape: RECTANGULAR

The rectangular package shape aids in optimized space usage on circuit boards, facilitating compact designs.

Terminal Form: GULL WING

Gull wing terminals simplify the soldering process, ensuring a reliable connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation leads to lower power consumption when the device is off, resulting in more energy-efficient designs.

Maximum Drain Current (Abs) (ID): 10 A

With a maximum drain current rating of 10A, this FET can handle high current loads, making it suitable for demanding applications.

No. of Terminals: 8

Having 8 terminals allows for versatile connection options in circuit designs, accommodating various configurations.

Maximum Power Dissipation (Abs): 2.5 W

A maximum power dissipation of 2.5W indicates the capability to handle substantial power levels without overheating, enhancing reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports compact designs, making it well suited for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures high input impedance and low power consumption, which are advantageous for battery-powered devices.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows for reliable performance in high-temperature environments, extending the operational range.

Transistor Element Material: SILICON

Silicon is a well-established material for FETs, providing stability and performance in various electronic applications.

Maximum Drain Current (ID): 0.01 A

Although the maximum drain current rating of 0.01A may seem low, it can be suitable for low-power applications where high currents are not required.

Maximum Drain-Source On Resistance: 0.017 ohm

A low on-resistance value minimizes power loss during operation, contributing to overall energy efficiency in electronic devices.

Terminal Position: DUAL

Dual terminal positioning allows for better integration into diverse circuit layouts, enhancing flexibility in design.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS10NH3LL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

10 A

Maximum Drain Current (ID):

.01 A

Maximum Drain-Source On Resistance:

.017 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS10NH3LL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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