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STS3C2F100

STMicroelectronics

STS3C2F100 by STMicroelectronics

STS3C2F100 by STMicroelectronics is a dual N/P-channel FET designed for efficient switching applications. It features a max drain current of 3 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,659 parts In-Stock

1+ parts

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7,659

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Anansix

USA . 1,370 parts In-Stock

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1,370

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Digiode

USA . 719 parts In-Stock

1+ parts

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719

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,284 parts In-Stock

1+ parts

$0.685

100+ parts

-

1k+ parts

$0.617

10k+ parts

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1,284

$0.685

-

$0.617

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MKK Technologies

India . 1,302 parts In-Stock

1+ parts

$1.289

100+ parts

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1,302

$1.289

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DigiPath Technology Company

USA . 1,302 parts In-Stock

1+ parts

$1.289

100+ parts

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1,302

$1.289

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AZTECH Wire

Italy . 1,000 parts In-Stock

1+ parts

$9.410

100+ parts

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1,000

$9.410

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Parana Technologies

USA . 2,332 parts In-Stock

1+ parts

-

100+ parts

$0.820

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2,332

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$0.820

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Corphita

USA . 571 parts In-Stock

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571

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Overview

Unlock unparalleled performance with the STS3C2F100 from STMicroelectronics, a leader in semiconductor innovation. This premium small signal FET offers exceptional switching capabilities, ensuring efficiency and reliability for your applications. With its robust design and superior temperature resilience, it’s perfect for demanding environments. Experience the advantages of enhanced power management and versatility, delivering unmatched value to elevate your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides a lightweight and durable package, ensuring reliability in various applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for greater design flexibility in circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate elements with built-in diodes simplify circuit design and enhance protection against reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it suitable for a wide range of electronic devices.

Surface Mount: YES

Surface mount capability reduces PCB space requirements, making it ideal for compact electronic designs.

Minimum DS Breakdown Voltage: 100 V

A minimum breakdown voltage of 100V allows this FET to be used in high-voltage applications safely.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on PCBs and provides better thermal management.

Terminal Form: GULL WING

Gull wing terminals enhance solderability and mechanical stability, ensuring robust connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for efficient switching and lower power consumption in active circuits.

No. of Elements: 2

Having two elements allows for more advanced circuit designs, such as complementary push-pull configurations.

Maximum Drain Current (Abs) (ID): 1.5 A

A maximum drain current rating of 1.5 A supports a variety of applications, providing reliability under load.

No. of Terminals: 8

With 8 terminals, this FET can accommodate complex circuits while maintaining a compact footprint.

Maximum Power Dissipation (Abs): 2 W

A power dissipation rating of 2 W allows for efficient operation without overheating, suitable for continuous use.

Package Style (Meter): SMALL OUTLINE

The small outline design allows for integration into space-constrained applications without compromising performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and fast switching, making it ideal for modern electronics.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C enhances reliability in harsh environments.

Transistor Element Material: SILICON

Silicon provides excellent electronic properties and robustness for a wide range of applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Premium terminal finish enhances reliability and ensures excellent conductivity, leading to improved performance.

Maximum Drain Current (ID): 3 A

A maximum drain current rating of 3 A makes this FET suitable for demanding applications requiring higher currents.

Maximum Drain-Source On Resistance: 0.145 ohm

Low on-resistance value reduces power losses during operation, resulting in greater efficiency and performance.

Terminal Position: DUAL

Dual terminal positioning allows for flexible layout and easier integration into various circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS3C2F100 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.145 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS3C2F100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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