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STS8C5H30L

STMicroelectronics

STS8C5H30L by STMicroelectronics

STS8C5H30L by STMicroelectronics is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has 30V DS breakdown voltage, 4.2A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Package: SO-8, surface mountable with Gull Wing terminals.

Median Price

$0.196

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

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$0.196

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2

$0.196

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Nova Conductors

Japan . 10 parts In-Stock

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$1.452

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10

$1.452

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Vyrian

USA . 7,149 parts In-Stock

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Digiode

USA . 3,705 parts In-Stock

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Anansix

USA . 2,018 parts In-Stock

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2,018

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Chip Stock

USA . 254 parts In-Stock

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254

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Cyclops Electronics Ltd

UK . 75 parts In-Stock

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75

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ComSIT Distribution GmbH

Germany . 35 parts In-Stock

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Bristol Electronics

USA . 25 parts In-Stock

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Semtec, LLC

USA . 11 parts In-Stock

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Euro-Tech

UK . 10 parts In-Stock

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IDEA Electronic Components Group

UK . 466 parts In-Stock

1+ parts

$0.640

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$0.576

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466

$0.640

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$0.576

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MKK Technologies

India . 2,237 parts In-Stock

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$1.204

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DigiPath Technology Company

USA . 2,237 parts In-Stock

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$1.204

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Argo Parts USA

USA . 4,260 parts In-Stock

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$1.452

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$1.452

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Continental Prestige Electronics

USA . 3,711 parts In-Stock

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$1.452

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$1.423

3,711

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$1.423

Netroflash

USA . 1,000 parts In-Stock

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$1.452

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$1.452

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Ampacity Inc.

Singapore . 1,260 parts In-Stock

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$2.050

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$2.050

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AZTECH Wire

Italy . 836 parts In-Stock

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$18.724

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836

$18.724

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Kepictronics

USA . 55,000 parts In-Stock

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Lixinc

USA . 17,589 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,453 parts In-Stock

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Corphita

USA . 3,415 parts In-Stock

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Parana Technologies

USA . 2,296 parts In-Stock

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$0.766

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Discover the STS8C5H30L by STMicroelectronics, a high-quality small signal Field Effect Transistor that offers exceptional performance in switching applications. With its N-Channel and P-Channel configuration, this transistor provides versatility and efficiency like no other. Made with top-notch materials and cutting-edge technology, this product guarantees reliability and durability. Whether you're working on electronics projects or industrial applications, the STS8C5H30L is the perfect solution for your needs. Upgrade your designs with this innovative component and experience the difference it makes in your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and impact resistance, making the transistor suitable for various environments.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatility in circuit design and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides added protection against voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Being surface-mountable makes it easier to integrate the transistor into compact electronic designs.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this transistor can handle higher voltages without failure.

Maximum Drain Current (ID): 8 A

The high maximum drain current rating allows for reliable operation under heavy load conditions.

Maximum Power Dissipation (Abs): 2 W

The transistor can dissipate up to 2 watts of power, indicating good thermal management capabilities.

Maximum Drain-Source On Resistance: 0.025 ohm

The low on-resistance helps minimize power loss and improves efficiency in switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS8C5H30L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4.2 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS8C5H30L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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