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STS8DPF80

STMicroelectronics

STS8DPF80 by STMicroelectronics

STS8DPF80 by STMicroelectronics is a P-channel MOSFET designed for switching applications. It features an 80V breakdown voltage, 2A max drain current, and 0.25Ω on-resistance. This compact surface mount device is ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,464 parts In-Stock

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2,464

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Anansix

USA . 2,027 parts In-Stock

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2,027

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Digiode

USA . 327 parts In-Stock

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327

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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30

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 52 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

$0.909

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52

$1.010

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$0.909

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MKK Technologies

India . 1,637 parts In-Stock

1+ parts

$1.900

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1,637

$1.900

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DigiPath Technology Company

USA . 1,637 parts In-Stock

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$1.900

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1,637

$1.900

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Corphita

USA . 2,234 parts In-Stock

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2,234

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Parana Technologies

USA . 970 parts In-Stock

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$1.208

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970

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$1.208

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Overview

Elevate your designs with the STS8DPF80 from STMicroelectronics, a premier choice in small signal FETs. Renowned for their robust quality and innovative technology, STMicroelectronics ensures reliability and efficiency in every component. This P-channel transistor excels in switching applications, offering seamless integration with its compact surface mount design. Experience enhanced performance, reduced power loss, and the confidence of partnering with a leader in semiconductor solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package offers durability and is lightweight, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are ideal for high-side switching applications, providing flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having separate elements with built-in diodes enhances the functionality and reliability for load switching.

Transistor Application: SWITCHING

Designed specifically for switching applications, it ensures efficient and reliable signal control.

Surface Mount: YES

The surface mount capability allows for easier integration into compact electronic designs, saving space.

Minimum DS Breakdown Voltage: 80 V

With a high breakdown voltage, this FET can handle demanding applications, ensuring robustness.

Package Shape: RECTANGULAR

The rectangular shape is efficient for heat dissipation and maximizes PCB layout options.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and reliability in surface mount installations.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for efficient control and low power consumption in applications.

No. of Elements: 2

Two elements provide versatility for parallel or complementary switching configurations.

No. of Terminals: 8

With 8 terminals, the design facilitates multiple connections for increased functionality.

Package Style (Meter): SMALL OUTLINE

The small outline design is perfect for space-saving on modern PCBs while maintaining performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures low power consumption and high-speed switching capabilities.

Transistor Element Material: SILICON

Silicon ensures good thermal conductivity and performance, making it suitable for a wide range of applications.

Maximum Drain Current (ID): 2 A

A maximum current rating of 2 A allows this FET to drive significant loads, enhancing its versatility.

Maximum Drain-Source On Resistance: 0.25 ohm

Low on-resistance reduces power loss and increases efficiency, making it ideal for fast switching applications.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in layout design and improves ease of use in applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS8DPF80 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS8DPF80 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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