Loading...

STS8DNH3LL

STMicroelectronics

STS8DNH3LL by STMicroelectronics

STS8DNH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 8 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,036 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,036

-

-

-

-

Cyclops Electronics Ltd

UK . 1,762 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,762

-

-

-

-

Digiode

USA . 777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

777

-

-

-

-

Anansix

USA . 647 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

647

-

-

-

-

Semtec, LLC

USA . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90

-

-

-

-

Sunrise Surplus Inc.

USA . 35 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

35

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,276 parts In-Stock

1+ parts

$1.155

100+ parts

-

1k+ parts

$1.039

10k+ parts

-

1,276

$1.155

-

$1.039

-

MKK Technologies

India . 1,038 parts In-Stock

1+ parts

$2.171

100+ parts

-

1k+ parts

-

10k+ parts

-

1,038

$2.171

-

-

-

DigiPath Technology Company

USA . 1,038 parts In-Stock

1+ parts

$2.171

100+ parts

-

1k+ parts

-

10k+ parts

-

1,038

$2.171

-

-

-

AZTECH Wire

Italy . 1,220 parts In-Stock

1+ parts

$21.120

100+ parts

-

1k+ parts

-

10k+ parts

-

1,220

$21.120

-

-

-

Kepictronics

USA . 3,469 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,469

-

-

-

-

RC Electronics

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,400

-

-

-

-

Assy Fe

Spain . 2,032 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,032

-

-

-

-

Corphita

USA . 1,871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,871

-

-

-

-

A-Z Elektronik GmbH

Germany . 1,610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,610

-

-

-

-

Parana Technologies

USA . 1,109 parts In-Stock

1+ parts

-

100+ parts

$1.380

1k+ parts

-

10k+ parts

-

1,109

-

$1.380

-

-

Futuretech Components

Singapore . 294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

294

-

-

-

-

Overview

Experience unparalleled performance with the STS8DNH3LL from STMicroelectronics, a trusted leader in high-quality electronic components. This N-channel FET is designed for efficient switching applications, offering exceptional power management and reliability. With its compact size and robust construction, it seamlessly fits into diverse projects—from consumer electronics to industrial systems—delivering superior efficiency and lasting value that empowers your innovations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a reliable and durable package, ensuring longevity and performance stability in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their high efficiency and are preferable for switching applications, making this product suitable for a wide range of electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration offers added protection against reverse voltages, enhancing the durability and reliability of the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures optimal performance and efficiency in controlling electrical signals.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of PCB space, making integration into modern electronics easier.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V provides sufficient headroom for safe operation in diverse applications, preventing damage from voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape is ideal for efficient space utilization on printed circuit boards.

Terminal Form: GULL WING

Gull wing terminals ensure easier soldering and better mechanical stability, enhancing assembly reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode improves performance by allowing the transistor to conduct when a voltage is applied, offering effective control in low power applications.

No. of Elements: 2

Having 2 elements increases functionality while maintaining compact design, suitable for various circuit arrangements.

Maximum Drain Current (Abs) (ID): 8 A

With a maximum drain current of 8A, this FET can handle substantial loads, making it suitable for high-power applications.

No. of Terminals: 8

An 8-terminal design allows for versatile connection options, facilitating integration into various circuit designs.

Maximum Power Dissipation (Abs): 2 W

A maximum power dissipation of 2W enables the device to perform effectively under significant load conditions without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports modern circuit board designs, allowing for compact and efficient layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and fast switching speeds, making this FET ideal for digital and analog electronic applications.

Maximum Operating Temperature: 150 °C

A high operating temperature makes this transistor suitable for applications in demanding environments, improving reliability.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in electronic devices.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish enhances solderability and minimizes oxidation, ensuring long-term performance and reliability.

Maximum Drain Current (ID): 8 A

Reiterated maximum drain current indicates robustness, ensuring consistent performance even under high load conditions.

Maximum Drain-Source On Resistance: 0.025 ohm

A low on-resistance reduces power loss and increases efficiency during operation, making this FET ideal for high-frequency applications.

Terminal Position: DUAL

Dual terminal position aids in versatile soldering and connectivity options, allowing for flexible design layouts.

Maximum Time At Peak Reflow Temperature (s): 40

The reflow temperature specification is crucial for reliability during soldering processes, ensuring the integrity of the package.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C indicates that this FET can withstand modern soldering processes, improving assembly consistency.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS8DNH3LL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS8DNH3LL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2