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STT4PF20V

STMicroelectronics

STT4PF20V by STMicroelectronics

STT4PF20V by STMicroelectronics is a P-channel FET designed for switching applications. It features a max drain current of 3 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 13,262 parts In-Stock

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Digiode

USA . 2,086 parts In-Stock

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2,086

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Anansix

USA . 796 parts In-Stock

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Prism Electronics

USA . 15 parts In-Stock

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IDEA Electronic Components Group

UK . 59 parts In-Stock

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$1.608

100+ parts

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$1.447

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59

$1.608

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$1.447

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MKK Technologies

India . 1,486 parts In-Stock

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$3.024

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$3.024

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DigiPath Technology Company

USA . 1,486 parts In-Stock

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$3.024

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1,486

$3.024

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AZTECH Wire

Italy . 642 parts In-Stock

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$16.600

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642

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Perfect Parts

USA . 35,172 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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Corphita

USA . 4,488 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,272 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Parana Technologies

USA . 348 parts In-Stock

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$1.923

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348

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$1.923

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Overview

Experience the power of innovation with the STT4PF20V by STMicroelectronics, a leader in semiconductor technology. This P-channel small signal FET excels in switching applications, offering exceptional reliability and performance in a compact design. With its built-in diode and robust thermal management, this transistor is perfect for enhancing your circuit efficiency. Trust in STMicroelectronics to deliver quality and value that empower your next project to thrive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection against environmental conditions, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

The P-channel configuration allows for easier integration in certain circuit designs, providing flexibility in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances reliability by protecting against reverse voltage conditions, adding to the robustness of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET is optimized for efficiency and performance in power management circuits.

Surface Mount: YES

The surface mount capability allows for compact designs and easy integration into automated assembly processes.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this FET is suitable for applications requiring high voltage stability and reliability.

Package Shape: RECTANGULAR

The rectangular package shape allows for space-efficient layouts on PCBs, enhancing overall design effectiveness.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical stability and ease of soldering, ensuring a secure connection on the PCB.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures low off-state leakage, which is ideal for low-power applications where power efficiency is critical.

Maximum Drain Current (Abs) (ID): 3 A

The ability to handle a maximum drain current of 3 A allows use in a variety of applications, providing versatility in design options.

No. of Terminals: 6

Having 6 terminals facilitates complex circuit configurations, enabling more functionalities within a single component.

Maximum Power Dissipation (Abs): 1.6 W

With a power dissipation capability of 1.6 W, this FET can efficiently manage heat, ensuring reliable operation under load.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports compact circuit designs, ideal for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology allows for high input impedance and fast switching speeds, enhancing overall performance.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability in high-temperature environments, increasing the range of applications.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical performance and stability, crucial for reliable operation.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability, improving manufacturing efficiency and ensuring strong electrical connections.

Maximum Drain Current (ID): 3 A

Again emphasizing the 3 A current capacity, this specification assures designers of the consistency and reliability needed for demanding applications.

Maximum Drain-Source On Resistance: 0.135 ohm

With low on-resistance, this FET minimizes power losses during operation, enhancing energy efficiency in the circuit.

Terminal Position: DUAL

The dual terminal position facilitates easier routing on PCB layouts, providing flexibility for designers.

Technical Specifications

Small Signal Field Effect Transistors (FET) STT4PF20V attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.135 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT4PF20V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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