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STT4NF30L

STMicroelectronics

STT4NF30L by STMicroelectronics

STT4NF30L by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 4A Drain Current, and 0.09 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,049 parts In-Stock

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3,049

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Vyrian

USA . 2,367 parts In-Stock

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2,367

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Anansix

USA . 1,197 parts In-Stock

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1,197

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,053 parts In-Stock

1+ parts

$0.595

100+ parts

-

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$0.536

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2,053

$0.595

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$0.536

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MKK Technologies

India . 1,955 parts In-Stock

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$1.119

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1,955

$1.119

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DigiPath Technology Company

USA . 1,955 parts In-Stock

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$1.119

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1,955

$1.119

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Kepictronics

USA . 87,000 parts In-Stock

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87,000

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Corphita

USA . 2,247 parts In-Stock

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2,247

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Parana Technologies

USA . 1,946 parts In-Stock

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$0.712

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1,946

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$0.712

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Overview

Discover the STT4NF30L by STMicroelectronics, a high-quality Small Signal Field Effect Transistor designed for switching applications. With its N-channel configuration and built-in diode, this transistor offers reliable performance and efficiency. Ideal for a range of electronic devices, this transistor provides a minimum DS breakdown voltage of 30V and a maximum drain current of 4A. Trust in STMicroelectronics' expertise and innovation to deliver superior products that meet your needs. Unlock the potential of your projects with the STT4NF30L and experience exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the product suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Provides efficient operation in N-channel applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for added functionality in switching applications.

Transistor Application: SWITCHING

Optimized for switching operations, ensuring reliable performance.

Surface Mount: YES

Easy to mount on PCBs, saving space and allowing for efficient circuit design.

Minimum DS Breakdown Voltage: 30 V

Provides a safe operating range for the transistor in various applications.

Package Shape: RECTANGULAR

Compact shape for easy integration into circuits.

Terminal Form: GULL WING

Ensures secure connectivity and ease of soldering.

Operating Mode: ENHANCEMENT MODE

Allows for better control over the transistor's conductivity.

Maximum Drain Current (Abs) (ID): 4 A

Capable of handling high current loads, suitable for various applications.

No. of Terminals: 6

Provides multiple terminals for versatile connectivity options.

Maximum Power Dissipation (Abs): 2 W

Can dissipate heat efficiently, ensuring stable operation.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving and efficient circuit layout.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology for high-performance field-effect transistors.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments, increasing versatility.

Transistor Element Material: SILICON

Durable material for the transistor's active element.

Maximum Drain-Source On Resistance: 0.09 ohm

Low on-resistance for efficient switching performance.

Terminal Position: DUAL

Two terminal positions for flexible connectivity options.

Maximum Feedback Capacitance (Crss): 30 pF

Low feedback capacitance for improved high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) STT4NF30L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT4NF30L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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