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STC5NF30V

STMicroelectronics

STC5NF30V by STMicroelectronics

STC5NF30V by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for compact designs with its surface mount configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,891 parts In-Stock

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4,891

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Digiode

USA . 647 parts In-Stock

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647

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Anansix

USA . 575 parts In-Stock

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575

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IDEA Electronic Components Group

UK . 440 parts In-Stock

1+ parts

$1.747

100+ parts

-

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$1.572

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440

$1.747

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$1.572

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MKK Technologies

India . 1,119 parts In-Stock

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$3.285

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$3.285

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DigiPath Technology Company

USA . 1,119 parts In-Stock

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$3.285

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1,119

$3.285

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AZTECH Wire

Italy . 499 parts In-Stock

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$18.490

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499

$18.490

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Component Stockers USA

USA . 466 parts In-Stock

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$99.990

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466

$99.990

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A-Z Elektronik GmbH

Germany . 7,425 parts In-Stock

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7,425

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Kepictronics

USA . 3,002 parts In-Stock

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Corphita

USA . 2,793 parts In-Stock

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2,793

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Parana Technologies

USA . 1,947 parts In-Stock

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$2.089

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1,947

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$2.089

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Overview

Unlock superior performance with the STC5NF30V from STMicroelectronics, a leader in semiconductor innovation. This N-channel FET is designed for efficient switching applications, ensuring reliability and longevity in your projects. With its robust construction and advanced technology, it excels in various settings—from consumer electronics to industrial automation. Experience enhanced functionality and seamless integration, all while benefiting from ST’s commitment to quality and excellence. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and reliability in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically provide better performance with lower on-resistance compared to P-channel, making them efficient for switching applications.

Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for an efficient current flow while protecting against negative voltage spikes, enhancing reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET excels in fast switching speeds and low power loss.

Surface Mount: YES

Surface mount compatibility enables compact designs and automated assembly, reducing footprint and manufacturing costs.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET is suitable for a range of applications while providing a safety margin against voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient layout on PCB, optimizing space usage in electronic designs.

Terminal Form: GULL WING

Gull wing terminals ensure strong mechanical connections while allowing for easy soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode provides additional control options, allowing for precise operation in applications requiring variable performance.

No. of Elements: 2

Having two elements allows for more complex configurations within a single package, improving circuit performance and efficiency.

Maximum Drain Current (Abs) (ID): 5 A

A maximum drain current of 5A makes this FET effective for high-power applications while ensuring safe operation.

No. of Terminals: 8

The 8-terminal configuration provides versatility for different circuit designs, accommodating various electronic functions.

Maximum Power Dissipation (Abs): 1.5 W

With a power dissipation of 1.5W, this FET is capable of handling significant power without overheating, enhancing reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density PCB layouts, enabling more components in a compact space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making this FET ideal for battery-powered applications.

Maximum Operating Temperature: 150 °C

A high operating temperature range of up to 150 °C ensures reliable performance in demanding environments.

Transistor Element Material: SILICON

Silicon construction offers excellent electrical properties and stability, which is essential for high-performance applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold finish enhances conductivity and prevents corrosion, ensuring consistent performance over time.

Maximum Drain Current (ID): 5 A

Reiterated maximum drain current of 5A further emphasizes its capability to handle substantial current loads effectively.

Maximum Drain-Source On Resistance: 0.035 ohm

With a low on-resistance, this FET reduces power loss during operation, improving overall efficiency in power applications.

Terminal Position: DUAL

The dual terminal position allows for greater flexibility in circuit design and layout, facilitating easier connections in applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) STC5NF30V attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC5NF30V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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