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STP60NH2LL

STMicroelectronics

STP60NH2LL by STMicroelectronics

STP60NH2LL by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it has 0.0135 ohm On Resistance and operates at up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,969 parts In-Stock

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7,969

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Digiode

USA . 4,200 parts In-Stock

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4,200

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Anansix

USA . 2,770 parts In-Stock

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2,770

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 707 parts In-Stock

1+ parts

$0.372

100+ parts

-

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$0.335

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707

$0.372

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$0.335

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MKK Technologies

India . 1,931 parts In-Stock

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$0.699

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1,931

$0.699

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DigiPath Technology Company

USA . 1,931 parts In-Stock

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$0.699

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1,931

$0.699

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AZTECH Wire

Italy . 1,216 parts In-Stock

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$9.290

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1,216

$9.290

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QUARKTWIN TECHNOLOGY LTD

USA . 4,050 parts In-Stock

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4,050

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Corphita

USA . 3,728 parts In-Stock

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3,728

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Alle Elektronik GmbH

Germany . 3,262 parts In-Stock

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3,262

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Parana Technologies

USA . 435 parts In-Stock

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$0.444

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435

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$0.444

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Overview

Experience the superior quality and reliability of the STP60NH2LL by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers cutting-edge technology for Small Signal Field Effect Transistors. This N-CHANNEL transistor is perfect for switching applications, offering a maximum drain current of 40 A and a low on-resistance of 0.0135 ohm. With a high power dissipation of 60 W and a maximum operating temperature of 150 °C, this transistor provides exceptional performance and efficiency. Trust STMicroelectronics for all your electronic component needs and elevate your projects to the next level with the STP60NH2LL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and higher efficiency compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and high efficiency.

Minimum DS Breakdown Voltage: 24 V

Suitable for use in circuits with higher voltage requirements.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting on the PCB.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong connection and ease of soldering.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer low on-resistance and high input impedance.

Maximum Drain Current (Abs) (ID): 40 A

Capable of handling high current requirements without overheating.

No. of Terminals: 3

Simple and easy to integrate into circuits with limited number of terminals.

Maximum Power Dissipation (Abs): 60 W

Can handle high power dissipation while maintaining stable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and easy mounting options.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and fast operation.

Maximum Operating Temperature: 150 °C

Capable of operating in high temperature environments without compromising performance.

Transistor Element Material: SILICON

Silicon material offers high efficiency and reliability in transistor operation.

Maximum Drain-Source On Resistance: 0.0135 ohm

Low on-resistance results in less power loss and higher efficiency.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and connection.

Case Connection: DRAIN

Drain connection provides a secure and reliable connection point for external circuits.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for a specified time without damage.

Peak Reflow Temperature °C: 245

High peak reflow temperature ensures proper soldering and mechanical strength.

Technical Specifications

Small Signal Field Effect Transistors (FET) STP60NH2LL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

LOW THRESHOLD

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

24 V

Maximum Drain Current (Abs) (ID):

40 A

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.0135 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STP60NH2LL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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