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STS5DPF20L

STMicroelectronics

STS5DPF20L by STMicroelectronics

STS5DPF20L by STMicroelectronics is a P-channel MOSFET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 20 V, and operates in enhancement mode. Its compact SO8 package ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,608 parts In-Stock

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4,608

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Digiode

USA . 4,402 parts In-Stock

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4,402

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Anansix

USA . 2,630 parts In-Stock

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2,630

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,999 parts In-Stock

1+ parts

$0.389

100+ parts

-

1k+ parts

$0.350

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1,999

$0.389

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$0.350

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MKK Technologies

India . 1,740 parts In-Stock

1+ parts

$0.732

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1,740

$0.732

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DigiPath Technology Company

USA . 1,740 parts In-Stock

1+ parts

$0.732

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1,740

$0.732

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AZTECH Wire

Italy . 170 parts In-Stock

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$13.810

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170

$13.810

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Perfect Parts

USA . 2,800 parts In-Stock

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2,800

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Corphita

USA . 2,748 parts In-Stock

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2,748

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Parana Technologies

USA . 2,130 parts In-Stock

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$0.465

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2,130

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$0.465

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Overview

Unlock the potential of your designs with the STS5DPF20L from STMicroelectronics, a leader in innovative semiconductor solutions. This P-channel FET is engineered for seamless switching applications, offering exceptional reliability and performance in a compact package. With robust power dissipation capabilities and ease of use in surface mount configurations, it ensures efficiency and longevity, making it the perfect choice for automotive, industrial, and consumer electronics. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

The P-channel design allows for easier integration in high-side switching applications, making it a versatile choice for many circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having two separate elements with a built-in diode enhances circuit functionality and protection against back EMF.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures efficient operation, reducing energy loss.

Surface Mount: YES

The surface mount capability allows for compact design layouts, saving valuable board space and enabling easier automated assembly.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures reliable performance in various voltage conditions, adding to the device's robustness.

Package Shape: RECTANGULAR

The rectangular package shape optimizes layout and minimizes trace lengths on PCB, improving performance and reliability.

Terminal Form: GULL WING

Gull wing terminals provide stable mechanical support and better soldering properties, enhancing assembly reliability.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for lower on-resistance, translating to higher efficiency in switching applications.

No. of Elements: 2

Featuring two elements, this FET can handle more complex tasks in circuits, increasing versatility.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current of 5 A, this FET supports a wide range of applications demanding robust current handling.

No. of Terminals: 8

Eight terminals provide ample connectivity options for various circuit configurations, enhancing flexibility.

Maximum Power Dissipation (Abs): 2 W

A maximum power dissipation of 2 W allows for efficient thermal management, suitable for high-performance applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact design, ideal for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides fast switching speeds and low power consumption, making this FET ideal for modern electronic designs.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliable performance in demanding thermal environments.

Transistor Element Material: SILICON

Silicon material is known for its excellent electrical properties, ensuring high performance and reliability in various applications.

Maximum Drain Current (ID): 5 A

The capability to handle up to 5 A allows this FET to be used in more demanding applications where higher currents are required.

Maximum Drain-Source On Resistance: 0.075 ohm

A low on-resistance of 0.075 ohms means reduced power loss and improved efficiency during operation.

Terminal Position: DUAL

The dual terminal position enhances circuit layout options and supports better signal integrity in designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS5DPF20L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS5DPF20L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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