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STN3PF06

STMicroelectronics

STN3PF06 by STMicroelectronics

STN3PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, 2.5A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150 °C.

Median Price

$3.150

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 4,636 parts In-Stock

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$1.890

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4,636

$1.890

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Forefront Electronics and Design

USA . 10 parts In-Stock

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$4.410

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10

$4.410

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ComSIT USA

USA . 100,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 52,800 parts In-Stock

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Chip Stock

USA . 6,220 parts In-Stock

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Digiode

USA . 3,945 parts In-Stock

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Vyrian

USA . 2,604 parts In-Stock

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2,604

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Anansix

USA . 2,413 parts In-Stock

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2,413

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Bristol Electronics

USA . 1,640 parts In-Stock

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1,640

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Ashlea Components Ltd

UK . 289 parts In-Stock

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289

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Cyclops Electronics Ltd

UK . 42 parts In-Stock

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42

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Semi Source

USA . 36 parts In-Stock

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J & M Industries LLC

USA . 11 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 99 parts In-Stock

1+ parts

$0.420

100+ parts

$0.382

1k+ parts

$0.344

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99

$0.420

$0.382

$0.344

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IDEA Electronic Components Group

UK . 1,405 parts In-Stock

1+ parts

$1.216

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$1.095

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1,405

$1.216

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$1.095

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MKK Technologies

India . 1,712 parts In-Stock

1+ parts

$2.287

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$2.287

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DigiPath Technology Company

USA . 1,712 parts In-Stock

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$2.287

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$2.287

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AZTECH Wire

Italy . 423 parts In-Stock

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$14.540

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423

$14.540

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RC Electronics

USA . 86,245 parts In-Stock

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Kepictronics

USA . 10,377 parts In-Stock

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Perfect Parts

USA . 5,976 parts In-Stock

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Infinite Electronics LLP (Excess)

. 3,853 parts In-Stock

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3,853

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Alle Elektronik GmbH

Germany . 3,072 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,668 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,661 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Parana Technologies

USA . 899 parts In-Stock

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$1.454

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Corphita

USA . 345 parts In-Stock

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345

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Overview

Experience the unparalleled quality and reliability of the STN3PF06 P-Channel Small Signal Field Effect Transistor by STMicroelectronics. Designed for switching applications, this single transistor with a built-in diode offers exceptional performance and efficiency. With a maximum drain current of 2.5 A and a minimum DS breakdown voltage of 60 V, this transistor is perfect for a wide range of electronic projects. Trust in STMicroelectronics to provide cutting-edge technology and superior products that deliver value and benefits to customers. Elevate your designs with the STN3PF06 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability of the transistor.

Polarity or Channel Type: P-CHANNEL

P-CHANNEL type allows for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and improves overall performance.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for a wide range of electronic devices.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 60 V

High breakdown voltage ensures reliable operation in various voltage conditions.

Package Shape: RECTANGULAR

Rectangular package shape allows for compact and space-saving PCB designs.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides efficient control over the transistor's conductivity.

Maximum Drain Current (Abs) (ID): 2.5 A

High maximum drain current capability allows for handling of moderate power loads.

No. of Terminals: 4

4 terminals provide necessary connections for effective circuit integration.

Maximum Power Dissipation (Abs): 2.5 W

High power dissipation capability ensures the transistor can handle heat effectively.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact device designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology offers reliable performance and efficient operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures the transistor can withstand various environmental conditions.

Transistor Element Material: SILICON

Silicon material ensures good performance and reliability of the transistor.

Terminal Finish: Matte Tin (Sn)

Matte Tin finish provides a reliable and durable terminal connection.

Maximum Drain-Source On Resistance: 0.22 ohm

Low on resistance ensures efficient current flow and minimal power loss.

Terminal Position: DUAL

Dual terminal position allows for flexible circuit connections.

Case Connection: DRAIN

Drain case connection simplifies circuit layout and integration.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperature for a specified time, ensuring reliable soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables efficient soldering and assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) STN3PF06 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE ENERGY RATED

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.22 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STN3PF06 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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