Loading...

STS4DPFS30L

STMicroelectronics

STS4DPFS30L by STMicroelectronics

STS4DPFS30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max operating temperature of 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,484 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,484

-

-

-

-

Digiode

USA . 4,154 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,154

-

-

-

-

Anansix

USA . 432 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

432

-

-

-

-

Connector Distribution Corp

USA . 84 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

84

-

-

-

-

Right Parts Inc.

USA . 84 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

84

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 386 parts In-Stock

1+ parts

$0.583

100+ parts

-

1k+ parts

$0.525

10k+ parts

-

386

$0.583

-

$0.525

-

MKK Technologies

India . 523 parts In-Stock

1+ parts

$1.097

100+ parts

-

1k+ parts

-

10k+ parts

-

523

$1.097

-

-

-

DigiPath Technology Company

USA . 523 parts In-Stock

1+ parts

$1.097

100+ parts

-

1k+ parts

-

10k+ parts

-

523

$1.097

-

-

-

AZTECH Wire

Italy . 1,109 parts In-Stock

1+ parts

$18.090

100+ parts

-

1k+ parts

-

10k+ parts

-

1,109

$18.090

-

-

-

Alle Elektronik GmbH

Germany . 3,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,133

-

-

-

-

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Corphita

USA . 2,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,133

-

-

-

-

Parana Technologies

USA . 656 parts In-Stock

1+ parts

-

100+ parts

$0.697

1k+ parts

-

10k+ parts

-

656

-

$0.697

-

-

Overview

Elevate your electronic designs with the STS4DPFS30L by STMicroelectronics. This high-quality P-channel small signal field effect transistor offers reliable switching capabilities in a compact package. With a maximum drain current of 4A and a minimum DS breakdown voltage of 30V, this transistor is ideal for a wide range of applications. Whether you're working on consumer electronics, industrial equipment, or automotive systems, this innovative component will provide the performance and efficiency you need. Trust STMicroelectronics to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can withstand various environmental conditions, making the product long-lasting.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-state resistance and high input impedance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse polarity, enhancing the reliability of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and low power consumption.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and improving overall product performance.

Minimum DS Breakdown Voltage: 30 V

This high breakdown voltage ensures the transistor can handle higher voltages, increasing its versatility in different circuit designs.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on PCBs and efficient use of space.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer greater control over the on/off state, improving overall circuit efficiency.

Maximum Drain Current (Abs) (ID): 4 A

With a high maximum drain current, this transistor can handle high power applications with ease.

No. of Terminals: 8

Having multiple terminals allows for more versatile circuit designs and connections.

Maximum Power Dissipation (Abs): 1.6 W

The high power dissipation rating ensures the transistor can handle the heat generated during operation, improving reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate in demanding environments without overheating.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stability, making them suitable for a wide range of applications.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term performance.

Maximum Drain-Source On Resistance: 0.095 ohm

With a low on-resistance, this transistor minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and allow for easier connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS4DPFS30L attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.095 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS4DPFS30L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3