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STS4NM20N

STMicroelectronics

STS4NM20N by STMicroelectronics

STS4NM20N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 4 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Its compact SO8 package ensures easy surface mounting in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,807 parts In-Stock

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3,807

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Vyrian

USA . 2,965 parts In-Stock

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2,965

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Anansix

USA . 2,481 parts In-Stock

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2,481

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,357 parts In-Stock

1+ parts

$1.303

100+ parts

-

1k+ parts

$1.172

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2,357

$1.303

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$1.172

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MKK Technologies

India . 1,397 parts In-Stock

1+ parts

$2.450

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1,397

$2.450

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DigiPath Technology Company

USA . 1,397 parts In-Stock

1+ parts

$2.450

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1,397

$2.450

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Corphita

USA . 4,488 parts In-Stock

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4,488

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Parana Technologies

USA . 831 parts In-Stock

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$1.558

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831

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$1.558

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Overview

Elevate your designs with the STS4NM20N from STMicroelectronics, a leader in innovative semiconductor solutions. This high-performance N-channel FET is engineered for versatile switching applications, delivering reliability and efficiency in compact packages. With its robust breakdown voltage and thermal stability, it ensures peak performance even in demanding environments. Choose STMicroelectronics for unmatched quality and transformative technology that empowers your projects to thrive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and reliability in various environments, ensuring the transistor remains functional over time.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower resistance and faster switching speeds, making them ideal for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against reverse polarity, enhancing circuit safety and efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET enables efficient control of electrical signals, suitable for power management systems.

Surface Mount: YES

Surface mount compatibility allows for compact circuit designs, saving space on PCBs and enhancing manufacturing efficiency.

Minimum DS Breakdown Voltage: 200 V

A minimum breakdown voltage of 200V ensures reliability in high-voltage applications, making it suitable for various industrial uses.

Package Shape: RECTANGULAR

The rectangular shape ensures compatibility with a wide range of PCB layouts, simplifying integration into existing designs.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve the mechanical robustness of the connections on PCBs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control over the electrical characteristics of the transistor, ideal for precise applications.

Maximum Drain Current (Abs): 4 A

With a maximum drain current of 4A, this FET can handle substantial loads, making it versatile for various power applications.

No. of Terminals: 8

An eight-terminal configuration allows for complex circuit designs while maintaining a compact footprint.

Maximum Power Dissipation (Abs): 2.5 W

The ability to dissipate up to 2.5W ensures the transistor can operate effectively under load without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline packages are perfect for high-density applications, making this FET suitable in modern compact electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides better efficiency and performance, leading to lower power loss and increased overall reliability.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows this FET to be used in demanding environments, ensuring reliability under stress.

Transistor Element Material: SILICON

Silicon is a widely used material in electronics, providing a good balance between performance and cost while ensuring availability.

Terminal Finish: TIN LEAD

Tin-lead terminal finish promotes excellent solderability and corrosion resistance, enhancing the reliability of connections.

Maximum Drain Current (ID): 4 A

This specification reiterates the FET's capability to handle 4A, making it suitable for applications requiring significant current handling.

Maximum Drain-Source On Resistance: 0.13 ohm

A low on-resistance enables efficient operation with minimal power loss, making it ideal for power management and switching applications.

Maximum Feedback Capacitance (Crss): 12 pF

Low feedback capacitance allows for faster switching speeds, enhancing performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) STS4NM20N attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

12 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS4NM20N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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