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STN1HNC60

STMicroelectronics

STN1HNC60 by STMicroelectronics

STN1HNC60 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 0.4A max drain current, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,925 parts In-Stock

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1,925

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ComSIT Distribution GmbH

Germany . 1,618 parts In-Stock

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1,618

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Vyrian

USA . 1,157 parts In-Stock

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1,157

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Digiode

USA . 261 parts In-Stock

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261

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,601 parts In-Stock

1+ parts

$0.419

100+ parts

-

1k+ parts

$0.377

10k+ parts

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1,601

$0.419

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$0.377

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MKK Technologies

India . 1,483 parts In-Stock

1+ parts

$0.787

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1,483

$0.787

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DigiPath Technology Company

USA . 1,483 parts In-Stock

1+ parts

$0.787

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1,483

$0.787

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Kepictronics

USA . 56,000 parts In-Stock

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56,000

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Corphita

USA . 3,771 parts In-Stock

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3,771

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Parana Technologies

USA . 1,262 parts In-Stock

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$0.500

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1,262

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$0.500

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Overview

Unlock the power of efficiency with the STN1HNC60 N-channel FET from STMicroelectronics. Designed for seamless switching applications, this robust transistor ensures reliable performance while delivering exceptional value. With its compact surface mount design and built-in diode, it’s ideal for various electronic projects, providing customers with enhanced functionality and reliability. Trust in STMicroelectronics’ legacy of quality to elevate your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally provide better efficiency and performance for high-speed applications, making this product optimal for switching tasks.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the versatility of the transistor for different circuit designs, allowing easy integration into various systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET excels in fast and efficient operation, ideal for modern electronic designs.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly processes, improving manufacturing efficiency and saving space.

Minimum DS Breakdown Voltage: 600 V

With a high breakdown voltage, this FET can handle significant voltage stress, making it suitable for high-voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape contributes to efficient layout and routing on PCBs, facilitating better design flexibility.

Terminal Form: GULL WING

Gull wing terminals enhance solder joint reliability and ease of assembly, ensuring robust connections in surface mount situations.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control over the on/off states, resulting in improved efficiency in power management.

Maximum Drain Current (Abs): 0.4 A

With a maximum drain current of 0.4 A, this FET is suitable for moderate current applications, balancing performance and thermal management.

No. of Terminals: 4

A four-terminal design provides sufficient connectivity for effective operation while maintaining a compact package size.

Maximum Power Dissipation (Abs): 2.5 W

The ability to dissipate up to 2.5 W of power allows this transistor to operate efficiently without overheating in high-load applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for efficient space usage on PCBs, catering to compact electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology ensures high efficiency and switching speeds, making it ideal for modern electronic circuits.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C provides reliability and thermal resilience in diverse and demanding environments.

Transistor Element Material: SILICON

Silicon as the base material ensures excellent electrical properties and performance characteristics typical of high-quality transistors.

Terminal Finish: Matte Tin (Sn)

The matte tin finish enhances solderability and provides corrosion resistance, ensuring long-lasting performance in electronic assemblies.

Maximum Drain-Source On Resistance: 8 ohm

A low on-resistance of 8 ohms minimizes power loss during operation, improving overall efficiency in switching applications.

Terminal Position: DUAL

Dual terminal positioning optimizes layout options on the PCB, facilitating better connectivity and efficient use of space.

Case Connection: DRAIN

Having a drain connection allows for effective current flow management, crucial for the device's switching capabilities.

Technical Specifications

Small Signal Field Effect Transistors (FET) STN1HNC60 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

.4 A

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STN1HNC60 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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