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BSS138DW-7

Diodes Incorporated

BSS138DW-7 by Diodes Incorporated

BSS138DW-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm max on resistance. Ideal for switching applications, it features a small outline package with Gull Wing terminals and operates in enhancement mode up to 150°C.

Median Price

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Lifecycle Status

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13

In-Stock Inventory

1k+

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Chip Stock

USA . 427,280 parts In-Stock

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Vyrian

USA . 13,283 parts In-Stock

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Bristol Electronics

USA . 5,426 parts In-Stock

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VNN

France . 3,572 parts In-Stock

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Prism Electronics

USA . 3,064 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,890 parts In-Stock

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Inventory MP

USA . 2,463 parts In-Stock

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EMSNET

USA . 2,287 parts In-Stock

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PC Components Company LLC

USA . 2,216 parts In-Stock

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Semi Source

USA . 2,000 parts In-Stock

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Legend Electronics Inc.

USA . 410 parts In-Stock

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A2Z Electronics, Inc.

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Nova Conductors

Japan . 73 parts In-Stock

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Aztec Data Supply Inc.

USA . 750 parts In-Stock

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$1.230

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Corohmni

South Africa . 860 parts In-Stock

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$1.495

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AZTECH Wire

Italy . 690 parts In-Stock

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Semicontronic

India . 1,194 parts In-Stock

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$10.050

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$9.799

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$9.748

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Ampacity Inc.

Singapore . 549 parts In-Stock

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$52.050

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S.R.D Solutions

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Cyclops Electronics Ltd (Excess)

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Discover the power of the BSS138DW-7 by Diodes Incorporated, a top-quality N-CHANNEL Small Signal Field Effect Transistor designed for switching applications. With a compact package shape and gull wing terminals, this product offers enhanced performance and reliability. Perfect for a variety of electronic projects, the BSS138DW-7 is a versatile component that delivers outstanding results. Trust in Diodes Incorporated for cutting-edge technology and superior quality, and experience the difference with the BSS138DW-7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are known for their high input impedance, low on-resistance, and high current carrying capability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easy to control and offer high input impedance, making them suitable for various applications.

Maximum Drain Current (Abs) (ID): 0.2 A

With a maximum drain current of 0.2 A, this transistor can handle moderate current levels effectively.

Maximum Power Dissipation (Abs): 0.2 W

The transistor can dissipate up to 0.2 W of power without getting damaged, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures.

Maximum Drain-Source On Resistance: 3.5 ohm

The low on-resistance of 3.5 ohms ensures minimal power loss and improved efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 8 pF

The low feedback capacitance of 8 pF helps in reducing the chances of unwanted oscillations and ensuring stable operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS138DW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS138DW-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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