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BSS123-7

Diodes Incorporated

BSS123-7 by Diodes Incorporated

Diodes Inc. BSS123-7 is a N-channel FET with 100V DS breakdown voltage, 0.17A drain current, and 6ohm on-resistance. Ideal for switching applications in small outline packages, operating from -55 to 150°C with Gull Wing terminals.

Median Price

$0.346

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 1,000 parts In-Stock

1+ parts

$0.111

100+ parts

$0.059

1k+ parts

$0.052

10k+ parts

$0.046

1,000

$0.111

$0.059

$0.052

$0.046

Component Electronics Inc.

Canada . 11 parts In-Stock

1+ parts

$0.580

100+ parts

$0.430

1k+ parts

$0.380

10k+ parts

-

11

$0.580

$0.430

$0.380

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Vyrian

USA . 7,250 parts In-Stock

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7,250

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Nova Conductors

Japan . 900 parts In-Stock

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900

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VNN

France . 804 parts In-Stock

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804

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Prism Electronics

USA . 23 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 20 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,035 parts In-Stock

1+ parts

$1.550

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4,035

$1.550

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AZTECH Wire

Italy . 420 parts In-Stock

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$11.634

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420

$11.634

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Ampacity Inc.

Singapore . 555 parts In-Stock

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$24.050

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555

$24.050

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Kepictronics

USA . 66,540 parts In-Stock

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66,540

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Metaverse IC Inc.

Canada . 33,333 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Argo Parts USA

USA . 2,865 parts In-Stock

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2,865

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Continental Prestige Electronics

USA . 832 parts In-Stock

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832

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Discover the power and efficiency of the BSS123-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal field effect transistors that are perfect for switching applications. With its N-channel configuration and built-in diode, this transistor offers superior performance and reliability. Whether you're looking to optimize your circuit design or enhance your electronic projects, the BSS123-7 provides the value and benefits you need. Trust Diodes Incorporated for all your semiconductor needs and experience the difference in quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL

Enhances the efficiency and performance of the transistor in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor, saving space and reducing component count.

Transistor Application: SWITCHING

Optimized for rapid switching operations, making it ideal for applications requiring quick response times.

Surface Mount: YES

Allows for easy and convenient installation on printed circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 100 V

Ensures reliable operation in high voltage environments, offering protection against voltage spikes and surges.

Maximum Drain Current (Abs) (ID): 0.17 A

Capable of handling moderate current levels, making it suitable for various low-power applications.

Maximum Power Dissipation (Abs): 0.3 W

Efficiently dissipates heat generated during operation, preventing overheating and ensuring stable performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

Capable of operating in extreme cold temperatures, providing versatility for use in different climates.

Maximum Drain-Source On Resistance: 6 ohm

Offers low resistance for efficient current flow, contributing to high performance and reduced power consumption.

Maximum Feedback Capacitance (Crss): 6 pF

Minimizes feedback capacitance, reducing the risk of signal distortion and ensuring accurate signal transmission.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS123-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

.17 A

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

6 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSS123-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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