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FDS4770

Fairchild Semiconductor

FDS4770 by Fairchild Semiconductor

FDS4770 by Fairchild Semiconductor is a N-CHANNEL FET with a min DS Breakdown Voltage of 40V. It is used for SWITCHING applications and has a max Drain Current (ID) of 13.2A.

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Overview

Looking for a high-quality small signal field effect transistor? Look no further than the FDS4770 by Fairchild Semiconductor! With its N-channel polarity and single configuration with built-in diode, this transistor is perfect for switching applications. Its surface mount capability and rectangular package shape make it easy to install, while its enhancement mode operating mode ensures optimal performance. With a minimum DS breakdown voltage of 40V and a maximum drain current of 13.2A, this transistor can handle even the toughest tasks. Trust in Fairchild Semiconductor's expertise and choose the FDS4770 for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material provides durability and protection, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel polarity or channel type of this product allows for efficient signal amplification and conductivity, making it ideal for electronic devices.

Configuration: SINGLE WITH BUILT-IN DIODE

With a single configuration and a built-in diode, this product simplifies circuit design and enhances functionality, making it a convenient choice.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and reliable switching performance, making it a reliable choice for electronic circuits.

Surface Mount: YES

This product's surface mount capability enables easy installation on PCBs, saving space and allowing for high-density circuit designs, making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 40 V

With a minimum DS breakdown voltage of 40V, this product can handle higher voltage applications, ensuring reliable performance and protection against voltage spikes.

Package Shape: RECTANGULAR

The rectangular package shape of this transistor facilitates easy mounting and ensures compatibility with standard PCB layouts, making it convenient for integration into various electronic systems.

Terminal Form: GULL WING

Equipped with gull wing terminal form, this product enables easy soldering and robust mechanical connections, ensuring secure operation in demanding environments.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode, this transistor offers low power consumption and fast response times, making it suitable for energy-efficient applications requiring quick switching.

No. of Elements: 1

With a single element, this transistor simplifies circuit designs, reduces complexity, and enhances reliability, making it a cost-effective choice.

Maximum Drain Current (Abs) (ID): 13.2 A

With a maximum drain current of 13.2A, this transistor can handle high current loads, making it suitable for power-intensive applications.

No. of Terminals: 8

Featuring 8 terminals, this transistor provides sufficient connectivity options for various circuit configurations, enhancing versatility and ease of use.

Maximum Power Dissipation (Abs): 2.5 W

With a maximum power dissipation of 2.5W, this transistor can handle high power levels efficiently, ensuring reliable operation and preventing overheating.

Package Style (Meter): SMALL OUTLINE

This transistor's small outline package style enables compact and space-saving designs, making it suitable for miniaturized electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Built with metal-oxide semiconductor technology, this transistor offers high performance, low power consumption, and improved efficiency, making it a reliable choice for various applications.

Maximum Operating Temperature: 175 °C

Designed to withstand temperatures up to 175°C, this transistor ensures stable performance even in high-temperature environments, making it suitable for demanding applications.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent electronic properties, ensuring reliable and consistent performance, making it a trusted choice for diverse electronic applications.

Terminal Finish: MATTE TIN

With a matte tin terminal finish, this transistor provides excellent solderability and corrosion resistance, ensuring long-term reliability in various operating conditions.

Maximum Drain-Source On Resistance: 0.0075 ohm

Featuring a maximum drain-source on resistance of 0.0075 ohm, this transistor offers low resistance and enhanced conductivity, ensuring efficient operation in demanding applications.

Terminal Position: DUAL

Equipped with a dual terminal position, this transistor offers flexibility in PCB layout and allows for easier connections, enhancing usability and versatility.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor's packaging provides proper protection against moisture, ensuring reliable performance and longevity even in humid environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS4770 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

13.2 A

Maximum Drain Current (ID):

13.2 A

Maximum Drain-Source On Resistance:

.0075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS4770 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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