Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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IRFM210BTF_FP001
Fairchild Semiconductor
Fairchild Semiconductor's IRFM210BTF_FP001 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for SWITCHING applications. It features 0.77A max drain current, 1.5 ohm max on resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 2W power dissipation at 150°C.
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
.77 A
1.5 ohm
METAL-OXIDE SEMICONDUCTOR
9 pF
R-PDSO-G4
e3
1
4
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
2 W
Not Qualified
FET General Purpose Power
YES
MATTE TIN
GULL WING
DUAL
SWITCHING
SILICON
NTLJS4149PTAG
Onsemi
NTLJS4149PTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.5A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
30 V
4.5 A
2.7 A
.062 ohm
S-PDSO-N6
6
-55 Cel
SQUARE
260
P-CHANNEL
3.2 W
Other Transistors
TIN
NO LEAD
NTLJS4149PTBG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6;
2N7002K,215
NXP Semiconductors
2N7002K,215 by NXP Semiconductors is a small signal FET with N-channel polarity. It operates in enhancement mode for switching applications. With a max drain current of 0.34A and breakdown voltage of 60V, it's ideal for high-power circuits in various electronic devices.
LOGIC LEVEL COMPATIBLE
60 V
.34 A
3.9 ohm
10 pF
TO-236AB
R-PDSO-G3
3
-65 Cel
.83 W
30
2N7002T,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .3 A; JEDEC-95 Code: TO-236AB;
.3 A
5 ohm
BF1205C,115
NXP Semiconductors' BF1205C,115 is a N-CHANNEL FET for SWITCHING applications. It has a 6V DS Breakdown Voltage and max Drain Current of 0.03A. With PLASTIC/EPOXY body, it operates in ENHANCEMENT MODE at 150°C.
COMPLEX
6 V
.03 A
R-PDSO-G6
2
.18 W
BF1210,115
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G6; Transistor Element Material: SILICON;
COMMON SOURCE, 2 ELEMENTS
DUAL GATE, ENHANCEMENT MODE
AMPLIFIER
BF1214,115
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A;
PHK24NQ04LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: MS-012; JESD-30 Code: R-PDSO-G8; No. of Terminals: 8;
40 V
21.2 A
.0077 ohm
MS-012
R-PDSO-G8
8
PHK28NQ03LT,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Terminal Position: DUAL; Qualification: Not Qualified;
23.7 A
.0065 ohm
e4
6.25 W
Nickel/Palladium/Gold (Ni/Pd/Au)
PHK4NQ20T,518
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
4 A
.13 ohm
FET General Purpose Powers
PHKD13N03LT,118
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 2; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
10.4 A
.02 ohm
MS-012AA
PMBFJ620,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Minimum DS Breakdown Voltage: 25 V;
LOW NOISE
SEPARATE, 2 ELEMENTS
25 V
2.5 pF
.19 W
FET General Purpose Small Signal
PMR280UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;
20 V
.98 A
.34 ohm
.53 W
PMR400UN,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
.8 A
.48 ohm
PMV31XN,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G3;
5.9 A
.037 ohm
PMV45EN,215
PMV45EN,215 by NXP Semiconductors is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.4A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W and can withstand temperatures up to 150°C.
5.4 A
.042 ohm
IEC-60134
PMWD20XN,118
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
.022 ohm
MO-153
PMWD26UN,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 7800 ohm;
5.2 A
7800 ohm
MO-153AB
PMWD30UN,518
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
5 A
.04 ohm
2N7002ET3G
2N7002ET3G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.26A max drain current. Ideal for switching applications, it operates in enhancement mode with built-in diode, GULL WING terminals, and 150°C max temp.
.26 A
2.5 ohm
.3 W
2N7002KT3G
2N7002KT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.32A Drain Current and 1.6ohm On Resistance. Operating at 150 °C, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
.32 A
1.6 ohm
2N7002WT3G
2N7002WT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.31A Drain Current, and 1.6 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with built-in diode and resistor. Operates in ENHANCEMENT MODE at max temp of 150°C, making it suitable for various electronic devices.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.31 A
.33 W
NTZD5110NT5G
NTZD5110NT5G by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include 60V DS breakdown voltage, 0.294A max drain current, and 1.6 ohm max on resistance. With small outline package style & operating temp up to 150 °C, it's suitable for various electronic designs.
.294 A
R-PDSO-F6
.25 W
FLAT
CSD75205W1015
Texas Instruments
CSD75205W1015 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 1.2A Drain Current, and 0.18ohm On Resistance. With a max operating temperature of 150°C, it's ideal for high-performance electronic devices requiring efficient power management.
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
1.2 A
.18 ohm
33 pF
R-XBGA-B6
UNSPECIFIED
GRID ARRAY
NOT SPECIFIED
.75 W
BALL
BOTTOM
PHT4NQ10LT,135
NXP Semiconductors PHT4NQ10LT,135 is a N-CHANNEL FET with 100V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.25 ohm max on resistance, and operates in enhancement mode at up to 150°C.
100 V
3.5 A
.25 ohm
6.9 W
BSS119E6433
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
.17 A
6 ohm
4.1 pF
.36 W
TF202THC-5-TL-H
TF202THC-5-TL-H by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, 150 °C max temp, and TIN BISMUTH finish. Ideal for surface mount applications in small signal circuits requiring high temperature tolerance.
JUNCTION
e6
.1 W
TIN BISMUTH
2N4117A-E3
Vishay Intertechnology
Vishay Intertechnology's 2N4117A-E3 is a N-CHANNEL FET with DEPLETION MODE operation. It has a max power dissipation of 0.3W and feedback capacitance of 1.5pF, making it ideal for AMPLIFIER applications. The transistor features a METAL package body, ROUND shape, and WIRE terminals for efficient performance up to 175°C.
SINGLE
1.5 pF
TO-206AF
O-MBCY-W4
DEPLETION MODE
175 Cel
METAL
ROUND
CYLINDRICAL
NO
WIRE
NTHD3133PFT1G
NTHD3133PFT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.08 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.
3.2 A
.08 ohm
R-XDSO-C8
2.1 W
C BEND
NTHD3133PFT3G
NTHD3133PFT3G by Onsemi is a P-CHANNEL FET for switching applications. Features include 20V DS breakdown voltage, 3.2A max drain current, and 0.08 ohm max on resistance. Ideal for enhancement mode operation in small outline packages with tin finish terminals.
DMN3115UDM-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOW THRESHOLD
3.22 A
.06 ohm
.9 W
DMN2170U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
2.3 A
.07 ohm
34 pF
.6 W
DMN2230U-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 20 V;
2 A
.11 ohm
30 pF
Matte Tin (Sn)
NTHS4166NT1G
NTHS4166NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 8.2A max drain current, and 0.022 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a built-in diode, small outline package style, and can withstand up to 150°C operating temperature.
8.2 A
4.9 A
R-PDSO-C8
2.2 W
NTJD3158CT1G
NTJD3158CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has a max drain current of 0.82A and on-resistance of 0.375 ohm. Operating at up to 150 °C, it features a peak reflow temp of 260°C and feedback capacitance of 5pF.
.82 A
.63 A
.375 ohm
5 pF
N-CHANNEL AND P-CHANNEL
.35 W
DMN33D8LDW-13
DMN33D8LDW-13 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 0.25A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package, suitable for surface mount technology.
.25 A
3 ohm
AEC-Q101
SZNUD3105DMT1G
SZNUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for AEC-Q101 compliant automotive electronics.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
.5 A
1.3 ohm
Matte Tin (Sn) - annealed
DMP58D0SV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
50 V
.16 A
8 ohm
1.4 pF
.4 W
MIL-STD-202
NUS3116MTR2G
NUS3116MTR2G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5.47A Drain Current, and 0.05 ohm On Resistance. With ENHANCEMENT MODE operation and 150 °C max temp, it's ideal for high-power switching circuits in compact designs.
12 V
5.47 A
4.4 A
.05 ohm
S-XBCC-N8
CHIP CARRIER
1.7 W
DMP57D5UFB-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .425 W; Maximum Drain-Source On Resistance: 6 ohm; Moisture Sensitivity Level (MSL): 1;
.2 A
R-PBCC-N3
.425 W
NICKEL PALLADIUM GOLD
NTLUD3A260PZTAG
NTLUD3A260PZTAG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a square package and operates in ENHANCEMENT MODE for efficient performance.
1.7 A
1.3 A
.2 ohm
1.3 W
NTLUD3A260PZTBG
NTLUD3A260PZTBG by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 1.7A, Max Power Dissipation of 1.3W, and Max Operating Temperature of 150 °C. This small outline transistor has a Drain terminal connection and operates in ENHANCEMENT MODE.
NTF2955PT1G
NTF2955PT1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 1.7A max drain current, and 0.185 ohm max on resistance. This enhancement mode transistor comes in a small outline package with gull wing terminals for surface mount assembly.
.185 ohm
TO-261AA
SI1034X-T1-GE3
Vishay Intertechnology's SI1034X-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.18A, and max power dissipation of 0.28W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.
.18 A
.28 W
SI2303BDS-T1-GE3
SI2303BDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 30V DS breakdown voltage and 1.49A max drain current. Ideal for enhancement mode operation in applications requiring small outline, surface mount transistors with built-in diode, such as power management circuits.
1.49 A
TO-236
SI3433BDV-T1-GE3
SI3433BDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 4.3A Drain Current, and 0.042ohm On Resistance. Ideal for small signal applications in electronics due to its SINGLE configuration with built-in diode and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE, suitable for surface mount designs in various electronic devices.
4.3 A
PURE MATTE TIN
DMP2225L-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
2.6 A
1.08 W
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