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IRFM210BTF_FP001

Fairchild Semiconductor

IRFM210BTF_FP001 by Fairchild Semiconductor

Fairchild Semiconductor's IRFM210BTF_FP001 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for SWITCHING applications. It features 0.77A max drain current, 1.5 ohm max on resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 2W power dissipation at 150°C.

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Overview

Looking for a high-quality solution for your switching applications? Look no further than the IRFM210BTF_FP001 by Fairchild Semiconductor. With a durable plastic/epoxy package body and a built-in diode, this N-channel field effect transistor offers reliable performance and versatility. Perfect for enhancing your circuit designs, this transistor can handle a maximum drain current of 0.77A and has a minimum breakdown voltage of 200V. Trust Fairchild Semiconductor to deliver top-notch products that provide value and benefits to our customers. Upgrade your projects with the IRFM210BTF_FP001 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching circuits and offer efficient performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for better protection and helps in preventing voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable, it facilitates easy integration onto circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 200 V

The high breakdown voltage allows for handling higher voltages, increasing the versatility of the transistor.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation rating, the transistor can handle power efficiently without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures stability and performance in various environmental conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRFM210BTF_FP001 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

.77 A

Maximum Drain Current (ID):

.77 A

Maximum Drain-Source On Resistance:

1.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

9 pF

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFM210BTF_FP001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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