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PHT4NQ10LT,135

NXP Semiconductors

PHT4NQ10LT,135 by NXP Semiconductors

NXP Semiconductors PHT4NQ10LT,135 is a N-CHANNEL FET with 100V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a built-in diode, 0.25 ohm max on resistance, and operates in enhancement mode at up to 150°C.

Median Price

$0.254

Lifecycle Status

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Nova Conductors

Japan . 20 parts In-Stock

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Chip Stock

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Vyrian

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BCID Electronics Ltd.

Israel . 8,060 parts In-Stock

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Digiode

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Bristol Electronics

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A&K Electronics

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Rotakorn

Sweden . 2,330 parts In-Stock

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Semtec, LLC

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Euro-Tech

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Anansix

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LIBRA Elektronik GmbH

Germany . 689 parts In-Stock

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Prism Electronics

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Sensible Micro Corp

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Inventory MP

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Corohmni

South Africa . 73 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Continental Prestige Electronics

USA . 4,438 parts In-Stock

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Argo Parts USA

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Advanced Electronics

New Zealand . 20 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,392 parts In-Stock

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One Stop Electronics

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AZTECH Wire

Italy . 339 parts In-Stock

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Semicontronic

India . 1,570 parts In-Stock

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Ampacity Inc.

Singapore . 1,387 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

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Overview

Unleash the power of innovation with the PHT4NQ10LT,135 by NXP Semiconductors. Crafted with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled performance in switching applications. With a built-in diode and high breakdown voltage, this N-Channel transistor ensures seamless operation and reliability. Designed for efficiency and durability, this product is a game-changer in the world of electronics. Experience the difference with NXP Semiconductors and take your projects to new heights with the PHT4NQ10LT,135.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching of signals in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with the built-in diode, making it a versatile component for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy installation on circuit boards, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 100 V

Provides a high breakdown voltage, offering protection against voltage spikes and ensuring reliable operation in demanding conditions.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment on the circuit board during assembly.

Terminal Form: GULL WING

Allows for secure soldering and connection to the circuit board, ensuring reliable signal transmission.

Operating Mode: ENHANCEMENT MODE

Enhances the transistor's performance by controlling the flow of current more efficiently.

Maximum Drain Current (Abs) (ID): 3.5 A

Supports high current applications, making it suitable for handling various circuit requirements.

No. of Terminals: 4

Provides multiple connection points, allowing for flexible integration into different circuit configurations.

Maximum Power Dissipation (Abs): 6.9 W

Can handle high power levels, ensuring reliable operation without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the circuit board, making it ideal for size-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced technology for improved performance and efficiency in signal processing.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, ensuring stability in harsh environmental conditions.

Transistor Element Material: SILICON

Offers superior electrical properties and durability, ensuring long-term performance and reliability.

Terminal Finish: TIN

Provides a reliable and conductive surface for soldering, ensuring secure connections and optimal signal transmission.

Maximum Drain-Source On Resistance: 0.25 ohm

Low resistance allows for efficient current flow, minimizing power loss and improving overall performance.

Terminal Position: DUAL

Supports versatile installation options, providing flexibility in circuit board layout and connectivity.

Case Connection: DRAIN

Ensures efficient heat dissipation and electrical isolation, prolonging the lifespan of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high temperatures during soldering processes, ensuring reliable assembly and operational integrity.

Peak Reflow Temperature °C: 260

Supports high-temperature reflow soldering, ensuring secure and durable connections during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) PHT4NQ10LT,135 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PHT4NQ10LT,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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