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PHT4NQ10T,135

NXP Semiconductors

PHT4NQ10T,135 by NXP Semiconductors

NXP Semiconductors PHT4NQ10T,135 is a N-CHANNEL FET with 3.5A max drain current and 0.25 ohm on-resistance. Ideal for switching applications, it has a built-in diode, 6.9W power dissipation, and operates up to 150°C.

Median Price

$0.198

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

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$0.123

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$0.123

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Farnell

UK . 19,580 parts In-Stock

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$0.299

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$0.229

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$0.182

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$0.167

19,580

$0.299

$0.229

$0.182

$0.167

Element14

Singapore . 18,474 parts In-Stock

1+ parts

$0.891

100+ parts

$0.458

1k+ parts

$0.354

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$0.282

18,474

$0.891

$0.458

$0.354

$0.282

Verical

USA . 232,625 parts In-Stock

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$0.183

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$0.183

Rochester

USA . 32,000 parts In-Stock

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$0.198

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$0.164

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$0.147

32,000

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$0.198

$0.164

$0.147

Chip1Stop

Japan . 49 parts In-Stock

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Digiode

USA . 4,595 parts In-Stock

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$0.155

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$0.155

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Nova Conductors

Japan . 870 parts In-Stock

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$0.274

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$0.274

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Chip Stock

USA . 110,000 parts In-Stock

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Vyrian

USA . 4,604 parts In-Stock

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Rebound Electronics

UK . 3,685 parts In-Stock

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Ashlea Components Ltd

UK . 550 parts In-Stock

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Sunrise Surplus Inc.

USA . 250 parts In-Stock

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Anansix

USA . 95 parts In-Stock

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Cyclops Electronics Ltd

UK . 74 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 213,504 parts In-Stock

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$0.139

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$0.139

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Corphita

USA . 2,788 parts In-Stock

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$0.147

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$0.147

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AZTECH Wire

Italy . 13,249 parts In-Stock

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$0.200

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$0.200

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Argo Parts USA

USA . 3,822 parts In-Stock

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$0.274

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$0.266

3,822

$0.274

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$0.266

Continental Prestige Electronics

USA . 1,050,034 parts In-Stock

1+ parts

$0.498

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$0.258

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$0.177

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1,050,034

$0.498

$0.258

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Aztec Data Supply Inc.

USA . 576 parts In-Stock

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$1.671

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Corohmni

South Africa . 546 parts In-Stock

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$1.689

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Perfect Parts

USA . 134,550 parts In-Stock

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UNI Independent Distributors

Spain . 8,302 parts In-Stock

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Lixinc

USA . 6,289 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Supply Digital

USA . 2,679 parts In-Stock

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Futuretech Components

Singapore . 160 parts In-Stock

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Kepictronics

USA . 160 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.269

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$0.260

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$0.255

100

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$0.269

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$0.255

Overview

Discover the power of the PHT4NQ10T,135 by NXP Semiconductors, a cutting-edge Small Signal Field Effect Transistor that is designed to elevate your electronic projects to new heights. With N-CHANNEL polarity and a SINGLE configuration with built-in diode, this transistor is perfect for SWITCHING applications. Its high-quality construction and innovative technology ensure reliable performance, while its compact design and GULL WING terminals make installation a breeze. Trust NXP Semiconductors to deliver superior products that exceed expectations. Upgrade your projects today with the PHT4NQ10T,135 and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, extending the lifespan of the transistor.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have higher electron mobility, making them suitable for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for additional functionality and protection in circuits utilizing this transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Surface Mount: YES

Surface mount technology makes for easy and space-efficient integration into circuit boards.

Maximum Power Dissipation (Abs): 6.9 W

With a high maximum power dissipation, this transistor can handle demanding applications without overheating.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures enables this transistor to be used in a wide range of environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) PHT4NQ10T,135 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

DRAIN

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PHT4NQ10T,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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