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CSD75205W1015

Texas Instruments

CSD75205W1015 by Texas Instruments

CSD75205W1015 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 1.2A Drain Current, and 0.18ohm On Resistance. With a max operating temperature of 150°C, it's ideal for high-performance electronic devices requiring efficient power management.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Prism Electronics

USA . 2,926 parts In-Stock

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Digiode

USA . 2,807 parts In-Stock

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Vyrian

USA . 1,904 parts In-Stock

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One Stop Electronics

USA . 708 parts In-Stock

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$1.050

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$1.050

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Parana Technologies

USA . 752 parts In-Stock

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$1.566

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$2.208

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Corohmni

South Africa . 106 parts In-Stock

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$1.648

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DigiPath Technology Company

USA . 2,344 parts In-Stock

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$1.724

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$1.586

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ChromeModa Solutions

Germany . 3,175 parts In-Stock

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$1.759

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$1.442

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IDEA Electronic Components Group

UK . 1,074 parts In-Stock

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$1.583

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Advanced Electronics

New Zealand . 74 parts In-Stock

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$1.778

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$1.618

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$1.458

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AZTECH Wire

Italy . 384 parts In-Stock

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Native Components

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Northwest PG Solutions

USA . 2,347 parts In-Stock

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A-Z Elektronik GmbH

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Lixinc

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Alle Elektronik GmbH

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Overview

Looking for a reliable and high-quality P-CHANNEL FET for your switching applications? Look no further than the CSD75205W1015 by Texas Instruments. With its common source configuration, built-in diode and resistor, and grid array package style, this FET offers exceptional performance and versatility. Whether you're working on power management, battery charging, or motor control projects, this transistor is sure to meet your needs. Trust Texas Instruments for cutting-edge technology and innovation, and experience the value and benefits of the CSD75205W1015 in your designs today!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have lower on-resistance and higher current carrying capacity compared to N-channel transistors, making them suitable for high-power applications.

Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

This configuration allows for easy integration into circuits, saving space and simplifying the design process.

Transistor Application: SWITCHING

Ideal for high-speed switching applications due to its fast response times and low on-resistance.

Surface Mount: YES

Suitable for automated assembly processes and compact designs.

Minimum DS Breakdown Voltage: 20 V

Can handle voltages up to 20 V, providing a good safety margin for various applications.

Package Shape: RECTANGULAR

Easily mountable and compatible with standard PCB layouts.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a positive voltage to turn on, making them suitable for a wide range of applications.

No. of Elements: 2

Having 2 elements allows for more complex circuit configurations and functionality.

Maximum Drain Current (Abs) (ID): 1.2 A

Capable of handling high currents, making it suitable for applications that require high power.

No. of Terminals: 6

Provides flexibility in connecting to external circuits and components.

Maximum Power Dissipation (Abs): 0.75 W

Can handle up to 0.75 W of power, ensuring reliable performance under varying load conditions.

Package Style (Meter): GRID ARRAY

Grid array package style provides better thermal dissipation and mechanical strength.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and low power consumption.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without degradation in performance.

Transistor Element Material: SILICON

Silicon-based transistors are widely used for their reliability and performance characteristics.

Maximum Drain-Source On Resistance: 0.18 ohm

Low on-resistance minimizes power loss and ensures efficient operation.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering.

Maximum Feedback Capacitance (Crss): 33 pF

Low feedback capacitance helps in reducing noise and improving signal integrity.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD75205W1015 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.2 A

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

33 pF

JESD-30 Code:

R-XBGA-B6

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD75205W1015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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