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CSD75301W1015

Texas Instruments

CSD75301W1015 by Texas Instruments

CSD75301W1015 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 1.2A Drain Current, and 0.19ohm On Resistance. With a max operating temperature of 150°C, it is suitable for common source configurations in enhancement mode with built-in diode elements.

Median Price

$0.385

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 915 parts In-Stock

1+ parts

$0.768

100+ parts

$0.584

1k+ parts

$0.525

10k+ parts

-

915

$0.768

$0.584

$0.525

-

Farnell

UK . 915 parts In-Stock

1+ parts

$0.783

100+ parts

$0.381

1k+ parts

$0.275

10k+ parts

-

915

$0.783

$0.381

$0.275

-

Rochester

USA . 1,175 parts In-Stock

1+ parts

-

100+ parts

$0.371

1k+ parts

$0.308

10k+ parts

$0.274

1,175

-

$0.371

$0.308

$0.274

DigiKey

USA . 1,175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.320

1,175

-

-

-

$0.320

Verical

USA . 1,175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.385

10k+ parts

$0.343

1,175

-

-

$0.385

$0.343

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 914 parts In-Stock

1+ parts

$0.288

100+ parts

-

1k+ parts

-

10k+ parts

-

914

$0.288

-

-

-

Vyrian

USA . 2,768 parts In-Stock

1+ parts

$0.303

100+ parts

-

1k+ parts

-

10k+ parts

-

2,768

$0.303

-

-

-

DigiKey Marketplace

USA . 1,375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,375

-

-

-

-

First Choice Components Inc.

USA . 174 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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174

-

-

-

-

SPM Sales

USA . 140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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140

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 458 parts In-Stock

1+ parts

$0.183

100+ parts

-

1k+ parts

-

10k+ parts

$0.176

458

$0.183

-

-

$0.176

Northwest PG Solutions

USA . 1,482 parts In-Stock

1+ parts

$0.201

100+ parts

-

1k+ parts

-

10k+ parts

$0.178

1,482

$0.201

-

-

$0.178

Continental Prestige Electronics

USA . 915 parts In-Stock

1+ parts

$0.237

100+ parts

-

1k+ parts

-

10k+ parts

-

915

$0.237

-

-

-

Corphita

USA . 1,083 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

-

1,083

$0.273

-

-

-

Parana Technologies

USA . 118 parts In-Stock

1+ parts

$0.581

100+ parts

-

1k+ parts

$1.670

10k+ parts

-

118

$0.581

-

$1.670

-

DigiPath Technology Company

USA . 144 parts In-Stock

1+ parts

$0.640

100+ parts

$0.589

1k+ parts

-

10k+ parts

-

144

$0.640

$0.589

-

-

ChromeModa Solutions

Germany . 2,260 parts In-Stock

1+ parts

$0.653

100+ parts

$0.535

1k+ parts

-

10k+ parts

-

2,260

$0.653

$0.535

-

-

IDEA Electronic Components Group

UK . 322 parts In-Stock

1+ parts

$0.653

100+ parts

-

1k+ parts

$0.588

10k+ parts

-

322

$0.653

-

$0.588

-

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.076

100+ parts

$0.979

1k+ parts

$0.882

10k+ parts

-

2,000

$1.076

$0.979

$0.882

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Corohmni

South Africa . 109 parts In-Stock

1+ parts

$1.499

100+ parts

-

1k+ parts

-

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109

$1.499

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A-Z Elektronik GmbH

Germany . 13,199 parts In-Stock

1+ parts

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13,199

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Perfect Parts

USA . 9,629 parts In-Stock

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9,629

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Kepictronics

USA . 2,975 parts In-Stock

1+ parts

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2,975

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-

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,500

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Overview

Elevate your electronic projects with the CSD75301W1015 by Texas Instruments, a top-tier manufacturer known for superior quality and reliability. This P-CHANNEL Small Signal Field Effect Transistor offers outstanding performance in switching applications, featuring a common source configuration with built-in diode elements. With a maximum drain current of 1.2A and a low on-resistance of 0.19 ohm, this transistor provides exceptional value for your circuit designs. Trust Texas Instruments for cutting-edge technology and unleash the full potential of your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various applications.

Polarity or Channel Type: P-CHANNEL

Suitable for use in applications where P-channel transistors are required.

Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers flexibility and convenience in circuit design, with built-in diode for specific applications.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it ideal for switching circuits.

Surface Mount: YES

Allows for easy and space-saving installation on PCBs, suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

Provides a good level of voltage breakdown for safe and reliable operation in low voltage applications.

Maximum Drain Current (Abs) (ID): 1.2 A

Capable of handling high drain currents, suitable for applications requiring higher power handling.

Maximum Power Dissipation (Abs): 0.8 W

Can dissipate heat effectively to prevent overheating, ensuring long-term stability and performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced MOSFET technology for efficient and reliable operation in various electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for use in environments with elevated temperature conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) CSD75301W1015 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.2 A

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

31 pF

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

CSD75301W1015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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