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2N7002K,215

NXP Semiconductors

2N7002K,215 by NXP Semiconductors

2N7002K,215 by NXP Semiconductors is a small signal FET with N-channel polarity. It operates in enhancement mode for switching applications. With a max drain current of 0.34A and breakdown voltage of 60V, it's ideal for high-power circuits in various electronic devices.

Median Price

$0.626

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

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$0.021

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600

$0.021

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Forefront Electronics and Design

USA . 300 parts In-Stock

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$1.230

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$1.230

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PC Components Company LLC

USA . 410,490 parts In-Stock

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410,490

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Chip Stock

USA . 167,000 parts In-Stock

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Vyrian

USA . 12,482 parts In-Stock

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Bristol Electronics

USA . 3,497 parts In-Stock

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3,497

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Atlantic Semiconductor

USA . 3,497 parts In-Stock

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Digiode

USA . 3,240 parts In-Stock

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3,240

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VNN

France . 2,704 parts In-Stock

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2,704

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Anansix

USA . 2,537 parts In-Stock

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2,537

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Component Sense

UK . 1,382 parts In-Stock

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Semtec, LLC

USA . 700 parts In-Stock

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700

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Prism Electronics

USA . 318 parts In-Stock

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318

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NexGen Digital

USA . 12 parts In-Stock

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North Shore Components

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10

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Distributors (Availability)

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Aranea Global

USA . 500 parts In-Stock

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$0.021

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$0.020

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$0.021

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Argo Parts USA

USA . 2,368 parts In-Stock

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Continental Prestige Electronics

USA . 2,263 parts In-Stock

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2,263

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Microchip USA

USA . 332 parts In-Stock

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$0.236

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332

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Corohmni

South Africa . 34 parts In-Stock

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$0.346

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34

$0.346

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Aztec Data Supply Inc.

USA . 1,988 parts In-Stock

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$1.150

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Ampacity Inc.

Singapore . 1,165 parts In-Stock

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$5.050

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AZTECH Wire

Italy . 363 parts In-Stock

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$17.106

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363

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One Stop Electronics

USA . 1,084 parts In-Stock

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$40.050

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QUARKTWIN TECHNOLOGY LTD

USA . 13,782 parts In-Stock

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UNI Independent Distributors

Spain . 4,603 parts In-Stock

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Corphita

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Overview

Unlock the power of innovation with the 2N7002K,215 by NXP Semiconductors. As a leading manufacturer in the industry, NXP Semiconductors delivers top-quality Small Signal Field Effect Transistors that excel in switching applications. With a maximum DS breakdown voltage of 60V and a compact package style, this N-channel transistor offers unparalleled efficiency and reliability. Whether you're designing consumer electronics or industrial equipment, the 2N7002K,215 provides the performance you need to take your projects to the next level. Elevate your designs with NXP Semiconductors today!

Feature Benefit Bullets

Package Body Material

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type

N-channel transistors are commonly used in switching applications due to their low on-resistance and high current-carrying capability, making this transistor suitable for efficient switching operations.

Configuration

The built-in diode allows for efficient freewheeling and protection against reverse voltage spikes, enhancing the reliability and performance of the transistor in switching applications.

Transistor Application

Designed for switching applications, this transistor offers fast switching speeds and low on-resistance, making it ideal for use in electronic devices that require efficient switching functionality.

Surface Mount

With surface mount capability, this transistor can be easily mounted on a PCB, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage

The minimum breakdown voltage of 60 V ensures reliable operation and protection against voltage spikes, making this transistor suitable for high voltage applications.

Maximum Drain Current (ID)

With a maximum drain current of 0.34 A, this transistor can handle moderate current loads, making it suitable for various electronic circuits and systems.

Maximum Power Dissipation

The maximum power dissipation of 0.83 W ensures efficient heat dissipation and reliable performance under high power conditions.

Operating Mode

In enhancement mode, this transistor requires a positive gate voltage to turn on, providing precise control over its operation and ensuring enhanced performance in switching applications.

Package Style (Meter)

The small outline package style saves space and allows for compact PCB designs, making this transistor suitable for applications where size constraints are a concern.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N7002K,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.34 A

Maximum Drain Current (ID):

.34 A

Maximum Drain-Source On Resistance:

3.9 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N7002K,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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