Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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DMS3012SFG-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Drain Current (ID): 9.5 A; Terminal Position: DUAL;
HIGH RELIABILITY
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
12 A
9.5 A
.01 ohm
METAL-OXIDE SEMICONDUCTOR
S-PDSO-N5
e3
1
5
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
N-CHANNEL
2.2 W
FET General Purpose Power
YES
MATTE TIN
NO LEAD
DUAL
30
SWITCHING
SILICON
DMG3415U-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
20 V
4 A
.0425 ohm
R-PDSO-G3
3
RECTANGULAR
P-CHANNEL
.9 W
AEC-Q101
Other Transistors
GULL WING
DMN55D0UTQ-7
DMN55D0UTQ-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.16A max drain current, and 4 ohm max on resistance. It's used in small outline packages for enhancement mode operation in applications requiring high temperature tolerance up to 150°C like automotive electronics (AEC-Q101).
50 V
.16 A
4 ohm
.2 W
TN0604N3-G-P005
Microchip Technology
TN0604N3-G-P005 by Microchip Technology is a N-CHANNEL FET with 40V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.7A Drain Current and 0.75ohm On Resistance. Ideal for low-power circuits requiring high efficiency and reliability.
HIGH INPUT IMPEDANCE
40 V
.7 A
.75 ohm
50 pF
TO-92
O-PBCY-T3
-55 Cel
ROUND
CYLINDRICAL
.74 W
NO
THROUGH-HOLE
BOTTOM
TN0604N3-G-P013
TN0604N3-G-P013 by Microchip Technology is a N-CHANNEL FET with 40V DS breakdown voltage. Ideal for switching applications, it has a max drain current of 0.7A and a built-in diode. Operating in enhancement mode, it can handle up to 0.74W power dissipation at temperatures ranging from -55°C to 150°C.
TN0620N3-G-P014
Microchip TN0620N3-G-P014 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 1W power dissipation, and -55 to 150°C operating temperature range. Its cylindrical package makes it suitable for through-hole mounting.
200 V
.25 A
6 ohm
35 pF
1 W
VP0550N3-G-P013
VP0550N3-G-P013 by Microchip Technology is a P-CHANNEL FET with 500V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 0.054A ID and 125Ω RDS(on). The transistor has a built-in diode, operates in ENHANCEMENT MODE, and has 10pF Crss.
500 V
.054 A
125 ohm
10 pF
BSS8402DWQ-13
BSS8402DWQ-13 by Diodes Incorporated is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 60V DS breakdown voltage, 7.5Ω max RDS(on), and 5pF Crss capacitance. With AEC-Q101 compliance, it suits automotive electronics requiring high reliability in compact designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
60 V
.115 A
7.5 ohm
5 pF
R-PDSO-G6
2
6
N-CHANNEL AND P-CHANNEL
BSS84DWQ-7
BSS84DWQ-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode in a small outline package, operating in enhancement mode at max 150°C. With 0.13A drain current and 10Ω on resistance, it offers reliable performance in various electronic circuits.
.13 A
10 ohm
12 pF
.3 W
DMB53D0UV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
.1 A
SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
200
R-PDSO-F6
.25 W
FLAT
.3 V
DMN5L06VK-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 50 V;
.28 A
3 ohm
DMP2004KQ-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
.6 A
.9 ohm
20 pF
.55 W
NTLUS3A18PZTAG
Onsemi
NTLUS3A18PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a SQUARE package suitable for SURFACE MOUNT technology.
ULTRA LOW RESISTANCE
8.2 A
5.1 A
.018 ohm
S-PDSO-N6
3.8 W
NTLUS3A18PZTBG
NTLUS3A18PZTBG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C temperature.
DMN2500UFB4-7B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .95 W; Maximum Drain Current (ID): .81 A; JESD-30 Code: R-PBCC-N3;
1 A
.81 A
.4 ohm
R-PBCC-N3
e4
CHIP CARRIER
.95 W
NICKEL PALLADIUM GOLD
DMN2500UFB4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .95 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PBCC-N3;
DMP2100UCB9-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Transistor Application: SWITCHING; No. of Terminals: 9;
3 A
.0175 ohm
55 pF
S-PBGA-B9
e1
9
GRID ARRAY
TIN SILVER COPPER
BALL
DMS3014SFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain Current (ID): 9 A; Reference Standard: AEC-Q101;
9 A
.014 ohm
R-PDSO-N5
2.1 W
SMMBF4391LT1G
SMMBF4391LT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 3.5pF Crss, and -55 to 150 °C operating temperature range. This SMALL OUTLINE transistor with GULL WING terminals is ideal for DEPLETION MODE operation in various electronic circuits.
SINGLE
30 ohm
JUNCTION
3.5 pF
TO-236
DEPLETION MODE
.225 W
TIN
SI4090DY-T1-GE3
Vishay Intertechnology
SI4090DY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage, 0.01 ohm RDS(on), and 19.7A ID. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.
100 V
19.7 A
MS-012AA
R-PDSO-G8
8
Pure Matte Tin (Sn) - annealed
DMP2540UCB9-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: BALL; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
25 V
.06 ohm
90 pF
FK3503010L
Panasonic
Panasonic FK3503010L is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 0.1A Drain Current, 6 ohm On Resistance, and 150°C Operating Temperature. Package: PLASTIC/EPOXY, Surface Mountable RECTANGULAR shape with FLAT terminals.
R-PDSO-F3
NOT SPECIFIED
.15 W
MTM78E2B0LBF
Panasonic MTM78E2B0LBF is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 4A drain current, 0.025 ohm on resistance, and 150°C max temp.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
.025 ohm
R-PDSO-F8
.7 W
NVF2201NT1G
NVF2201NT1G by Onsemi is a N-CHANNEL FET with 0.3A max drain current and 0.15W max power dissipation. Ideal for surface mount applications, it operates at up to 150 °C making it suitable for various electronic devices requiring high temperature resistance.
.3 A
FET General Purpose Powers
TPC8111(TE12L,Q,M)
Toshiba
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 8; Minimum DS Breakdown Voltage: 30 V;
11 A
NTTFS4C05NTAG
NTTFS4C05NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.0051 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150°C with Matte Tin finish.
75 A
.0051 ohm
S-PDSO-F5
33 W
Matte Tin (Sn) - annealed
NTMFS4C06NT3G
NTMFS4C06NT3G by Onsemi is a N-CHANNEL FET with 69A max drain current and 30.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology. Suitable for surface mount configurations, it offers reliability in various electronic designs.
69 A
30.5 W
NTTFS3A08PZTAG
NTTFS3A08PZTAG by Onsemi is a P-CHANNEL FET with 22A max drain current and 4.9W power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
22 A
4.9 W
DMN3030LFG-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Elements: 1; JESD-609 Code: e3;
8.6 A
2.3 W
DMN3030LFG-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 8.6 A; Terminal Finish: MATTE TIN;
FC6946010R
FC6946010R by Panasonic is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a 60V DS Breakdown Voltage, 0.1A Drain Current, and 15 ohm On Resistance. Operating in ENHANCEMENT MODE, it features a max power dissipation of 0.125W at 150°C.
15 ohm
.125 W
FJ3303010L
FJ3303010L by Panasonic is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. With 0.1A ID and 6 ohm RDS(on), this METAL-OXIDE SEMICONDUCTOR device comes in SMALL OUTLINE package for surface mount installation.
MTM763200LBF
Panasonic MTM763200LBF is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it operates in enhancement mode with max ID of 1.9A and RDS(on) of 0.105 ohm. Features METAL-OXIDE SEMICONDUCTOR tech and PLASTIC/EPOXY package for surface mount assembly.
1.9 A
.105 ohm
e6
TIN BISMUTH
NVGS3443T1G
NVGS3443T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 4.4A and 0.065 ohm Drain-Source Resistance, operating in ENHANCEMENT MODE at up to 150 °C. This SMALL OUTLINE transistor with GULL WING terminals is designed for high power dissipation and AEC-Q101 compliance.
4.4 A
2.2 A
.065 ohm
2 W
NVMD6P02R2G
The Onsemi NVMD6P02R2G is a P-CHANNEL FET with 7.8A max drain current and 2W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and power management systems.
7.8 A
NTNS3A65PZT5G
NTNS3A65PZT5G by Onsemi is a P-CHANNEL FET with max drain current of 0.281A and power dissipation of 0.218W. Ideal for applications requiring high temperature resistance up to 150°C, such as in surface mount configurations for electronic devices.
.281 A
.218 W
NTTFS4C25NTWG
NTTFS4C25NTWG by Onsemi is a N-CHANNEL FET with 27A max drain current and 20.2W power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 150°C, ideal for high-power applications requiring surface mount configuration.
27 A
20.2 W
NTLUD3A50PZTAG
NTLUD3A50PZTAG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.
NTLUD3A50PZTBG
NTLUD3A50PZTBG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for small signal applications, it operates at up to 150 °C and features surface mount technology, making it suitable for various electronic devices.
NTZD3154NT1H
NTZD3154NT1H by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 20V, Max Drain Current of 0.54A, and Max Power Dissipation of 0.25W. This small outline transistor operates in enhancement mode with a max temperature of 150 °C.
.54 A
.55 ohm
NTZD3155CT1H
NTZD3155CT1H by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance.
NTZS3151PT1H
NTZS3151PT1H by Onsemi is a P-CHANNEL FET with 0.86A max drain current and 0.21W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features metal-oxide semiconductor technology.
.86 A
.21 W
DMP2225LQ-7
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; No. of Elements: 1; Maximum Drain Current (ID): 2.6 A;
2.6 A
1.08 W
2N7002DWA-7
2N7002DWA-7 by Diodes Inc. is an N-channel FET with max drain current of 0.2A and power dissipation of 0.4W. Ideal for surface mount applications, it operates up to 150°C making it suitable for various electronic devices requiring low-power switching capabilities.
.2 A
.4 W
DMC6070LFDH-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: MATTE TIN; Additional Features: HIGH RELIABILITY;
3.1 A
.085 ohm
S-PDSO-N8
1.4 W
FK3303010L
Panasonic FK3303010L is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in DEPLETION MODE. With 0.1A ID and 6Ω RDS(on), this SMD transistor is suitable for various electronic devices.
NTLUS3A18PZCTAG
NTLUS3A18PZCTAG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.
NTLUS3A18PZCTBG
NTLUS3A18PZCTBG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive electronics or power management systems.
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