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TN0620N3-G-P014

Microchip Technology

TN0620N3-G-P014 by Microchip Technology

Microchip TN0620N3-G-P014 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. Features include single configuration with built-in diode, 1W power dissipation, and -55 to 150°C operating temperature range. Its cylindrical package makes it suitable for through-hole mounting.

Median Price

$1.575

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.071

100+ parts

$1.071

1k+ parts

$1.071

10k+ parts

-

5,000

$1.071

$1.071

$1.071

-

Microchip Technology

USA . 12,000 parts In-Stock

1+ parts

$1.730

100+ parts

$1.320

1k+ parts

$1.110

10k+ parts

$1.010

12,000

$1.730

$1.320

$1.110

$1.010

Verical

USA . 2,000 parts In-Stock

1+ parts

-

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-

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$1.575

2,000

-

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$1.575

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 14,000 parts In-Stock

1+ parts

$1.000

100+ parts

$0.900

1k+ parts

$0.810

10k+ parts

-

14,000

$1.000

$0.900

$0.810

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Nova Conductors

Japan . 800 parts In-Stock

1+ parts

$1.215

100+ parts

-

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800

$1.215

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Vyrian

USA . 4,983 parts In-Stock

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4,983

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 435 parts In-Stock

1+ parts

$0.455

100+ parts

-

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435

$0.455

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Ampacity Inc.

Singapore . 10,715 parts In-Stock

1+ parts

$0.880

100+ parts

-

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10,715

$0.880

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Semicontronic

India . 9,982 parts In-Stock

1+ parts

$0.880

100+ parts

$0.858

1k+ parts

$0.854

10k+ parts

-

9,982

$0.880

$0.858

$0.854

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.071

100+ parts

$1.071

1k+ parts

$1.071

10k+ parts

-

5,000

$1.071

$1.071

$1.071

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$1.191

100+ parts

-

1k+ parts

$1.143

10k+ parts

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500

$1.191

-

$1.143

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$1.215

100+ parts

$1.154

1k+ parts

$1.097

10k+ parts

$1.081

100

$1.215

$1.154

$1.097

$1.081

Continental Prestige Electronics

USA . 10,036 parts In-Stock

1+ parts

$1.215

100+ parts

-

1k+ parts

-

10k+ parts

$1.191

10,036

$1.215

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-

$1.191

Argo Parts USA

USA . 3,629 parts In-Stock

1+ parts

$1.215

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3,629

$1.215

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Corohmni

South Africa . 317 parts In-Stock

1+ parts

$1.864

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317

$1.864

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Microchip USA

USA . 2,529 parts In-Stock

1+ parts

$8.580

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2,529

$8.580

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AZTECH Wire

Italy . 662 parts In-Stock

1+ parts

$11.090

100+ parts

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662

$11.090

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QUARKTWIN TECHNOLOGY LTD

USA . 20,691 parts In-Stock

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Marpe Global Electronics

Taiwan . 8,399 parts In-Stock

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8,399

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XL Components Corporation

Australia . 3,927 parts In-Stock

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3,927

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QualityLine Systems

Poland . 3,834 parts In-Stock

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3,834

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Robosynatics

Brazil . 300 parts In-Stock

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300

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Lucentia Tech

USA . 300 parts In-Stock

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300

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Overview

Elevate your electronic designs with the TN0620N3-G-P014 by Microchip Technology. Crafted with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled performance in switching applications. With a rugged PLASTIC/EPOXY package body material and a breakthrough N-CHANNEL design, this transistor delivers reliability and efficiency like no other. Whether you're designing power supplies, LED lighting, or motor control systems, this transistor's single configuration with a built-in diode ensures seamless operation. Experience the difference with the TN0620N3-G-P014 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body makes the transistor lightweight and durable, perfect for applications where weight and size are important factors.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistance and higher efficiency compared to P-channel FETs, making them a good choice for switching applications.

Minimum DS Breakdown Voltage: 200 V

With a minimum breakdown voltage of 200 V, this FET can handle higher voltages without breakdown, making it suitable for high voltage applications.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this FET can handle moderate power levels without overheating, ensuring reliability in operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this FET to be used in applications where temperature variations are common without compromising performance.

Maximum Drain Current (ID): 0.25 A

The maximum drain current of 0.25 A indicates the current-carrying capability of this FET, ideal for low to moderate current applications.

Maximum Drain-Source On Resistance: 6 ohm

With a low maximum on-resistance of 6 ohms, this FET can minimize power loss and improve efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 35 pF

The low feedback capacitance of 35 pF reduces signal distortion and improves performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TN0620N3-G-P014 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (ID):

.25 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

35 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN0620N3-G-P014 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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