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TN0604N3-GP013

Supertex

TN0604N3-GP013 by Supertex

TN0604N3-GP013 by Supertex is a N-CHANNEL FET with 40V DS Breakdown Voltage. It's a SINGLE transistor with BUILT-IN DIODE, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it has 0.7A ID and 0.75 ohm RDS(on), suitable for various electronic devices.

Median Price

$1.520

Lifecycle Status

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3

In-Stock Inventory

1k+

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Mouser Electronics

USA . 37 parts In-Stock

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$1.520

100+ parts

$1.410

1k+ parts

$1.140

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37

$1.520

$1.410

$1.140

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Distributors (In-Stock)

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Nova Conductors

Japan . 139 parts In-Stock

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$1.082

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139

$1.082

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Vyrian

USA . 2,487 parts In-Stock

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Continental Prestige Electronics

USA . 8,262 parts In-Stock

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$1.082

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$1.060

8,262

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Argo Parts USA

USA . 3,861 parts In-Stock

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$1.082

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3,861

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Netroflash

USA . 100 parts In-Stock

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$1.082

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$1.027

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$1.006

100

$1.082

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$1.027

$1.006

Ampacity Inc.

Singapore . 20 parts In-Stock

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$1.290

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20

$1.290

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Component Stockers USA

USA . 480 parts In-Stock

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$1.500

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$1.130

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480

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AZTECH Wire

Italy . 925 parts In-Stock

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$16.387

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925

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Fulton Briggs Corp.

USA . 1,535 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TN0604N3-GP013 by Supertex. Crafted with precision and expertise, this Small Signal Field Effect Transistor offers unparalleled performance in switching applications. With a robust design and high-quality materials, this N-CHANNEL transistor ensures reliability and durability. Experience seamless operation and enhanced efficiency with its built-in diode configuration. Elevate your projects to new heights with the TN0604N3-GP013 by Supertex - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching applications and offer high efficiency.

Minimum DS Breakdown Voltage: 40 V

The high breakdown voltage ensures the transistor can handle higher voltages without damage.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more versatile use in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and reliable for such tasks.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can handle demanding conditions without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and efficiency for the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) TN0604N3-GP013 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Supertex

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

.7 A

Maximum Drain-Source On Resistance:

.75 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.74 W

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN0604N3-GP013 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

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