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TN0604N3-G-P005

Microchip Technology

TN0604N3-G-P005 by Microchip Technology

TN0604N3-G-P005 by Microchip Technology is a N-CHANNEL FET with 40V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.7A Drain Current and 0.75ohm On Resistance. Ideal for low-power circuits requiring high efficiency and reliability.

Median Price

$1.520

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 9,700 parts In-Stock

1+ parts

$1.520

100+ parts

$1.140

1k+ parts

$0.970

10k+ parts

$0.890

9,700

$1.520

$1.140

$0.970

$0.890

Mouser Electronics

USA . 796 parts In-Stock

1+ parts

$1.520

100+ parts

-

1k+ parts

$1.140

10k+ parts

-

796

$1.520

-

$1.140

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

$0.890

100+ parts

$0.810

1k+ parts

$0.720

10k+ parts

-

10,000

$0.890

$0.810

$0.720

-

Nova Conductors

Japan . 400 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

-

10k+ parts

-

400

$1.082

-

-

-

Vyrian

USA . 4,083 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,083

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,975 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

-

10k+ parts

$1.060

2,975

$1.082

-

-

$1.060

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

$1.082

-

-

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Argo Parts USA

USA . 1,859 parts In-Stock

1+ parts

$1.082

100+ parts

-

1k+ parts

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10k+ parts

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1,859

$1.082

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-

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Ampacity Inc.

Singapore . 4,954 parts In-Stock

1+ parts

$1.290

100+ parts

-

1k+ parts

-

10k+ parts

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4,954

$1.290

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-

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Fulton Briggs Corp.

USA . 1,932 parts In-Stock

1+ parts

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100+ parts

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1,932

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Overview

Enhance your electronic devices with the TN0604N3-G-P005 by Microchip Technology. As a leader in semiconductor technology, Microchip delivers top-quality small signal field effect transistors that are perfect for switching applications. With a built-in diode and high DS breakdown voltage of 40V, this N-channel transistor offers reliable performance and efficiency. Whether you're designing power supplies, motor control systems, or lighting fixtures, this enhancement mode transistor provides the value, benefits, and advantages that customers need to take their projects to the next level. Trust Microchip Technology to deliver innovative solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity, making them suitable for high-performance switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protects the transistor from reverse polarity, making it a versatile choice for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation, making it ideal for efficient circuit designs.

Minimum DS Breakdown Voltage: 40 V

The high breakdown voltage of 40V ensures reliable operation in demanding voltage conditions, providing a margin of safety for the circuit.

Package Shape: ROUND

The round package shape allows for easy mounting and assembly, making it convenient for use in various circuit configurations.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure connection and easy soldering, ensuring reliable performance in electronic circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low threshold voltage, making them suitable for digital and low-power applications.

No. of Terminals: 3

Having 3 terminals allows for easy integration into circuits and provides flexibility in circuit design for various applications.

Maximum Power Dissipation (Abs): 0.74 W

With a maximum power dissipation of 0.74W, this transistor can handle high power loads without overheating, ensuring reliable operation under varying conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design, making it suitable for applications where space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides good performance characteristics, high efficiency, and reliability, making it a suitable choice for various applications.

Maximum Power Dissipation Ambient: 0.74 W

The maximum power dissipation in ambient conditions of 0.74W ensures stable performance and reliability even in varying temperature environments.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for demanding industrial applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low noise, and good thermal stability, making them a reliable choice for a wide range of applications.

Minimum Operating Temperature: -55 °C

The minimum operating temperature of -55°C ensures reliable operation even in cold environments, making it suitable for various applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good conductivity, corrosion resistance, and solderability, ensuring a reliable electrical connection in circuits.

Maximum Drain Current (ID): 0.7 A

With a maximum drain current of 0.7A, this transistor can handle high current loads, making it suitable for power switching applications.

Maximum Drain-Source On Resistance: 0.75 ohm

The low drain-source on resistance of 0.75 ohms ensures efficient power transfer and low heat generation, making it suitable for high-frequency switching applications.

Terminal Position: BOTTOM

The bottom terminal position provides easy mounting and connection in circuits, ensuring a secure and reliable electrical connection.

Maximum Feedback Capacitance (Crss): 50 pF

With a maximum feedback capacitance of 50pF, this transistor offers good stability in high-frequency applications, ensuring reliable performance in electronic circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) TN0604N3-G-P005 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Additional Features:

HIGH INPUT IMPEDANCE

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

.7 A

Maximum Drain-Source On Resistance:

.75 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.74 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN0604N3-G-P005 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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