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TN0604N3-G

Microchip Technology

TN0604N3-G by Microchip Technology

Microchip Technology's TN0604N3-G is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max ID of 1A and 0.75 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 0.74W power dissipation at 150°C.

Median Price

$1.390

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4 parts In-Stock

1+ parts

$0.252

100+ parts

-

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4

$0.252

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Microchip Technology

USA . 21,840 parts In-Stock

1+ parts

$1.390

100+ parts

$1.060

1k+ parts

$0.890

10k+ parts

$0.810

21,840

$1.390

$1.060

$0.890

$0.810

DigiKey

USA . 2,114 parts In-Stock

1+ parts

$1.390

100+ parts

$1.060

1k+ parts

-

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2,114

$1.390

$1.060

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Mouser Electronics

USA . 489 parts In-Stock

1+ parts

$1.390

100+ parts

$1.060

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-

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489

$1.390

$1.060

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RS Americas

USA . 748 parts In-Stock

1+ parts

$1.400

100+ parts

$1.190

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748

$1.400

$1.190

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Newark

USA . 5 parts In-Stock

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$1.430

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5

$1.430

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Distrelec

Netherlands . 407 parts In-Stock

1+ parts

$1.802

100+ parts

$1.573

1k+ parts

$1.376

10k+ parts

-

407

$1.802

$1.573

$1.376

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Master Electronics

USA . 735 parts In-Stock

1+ parts

-

100+ parts

$0.791

1k+ parts

$0.688

10k+ parts

$0.646

735

-

$0.791

$0.688

$0.646

Verical

USA . 144 parts In-Stock

1+ parts

-

100+ parts

$1.039

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144

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$1.039

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 18,000 parts In-Stock

1+ parts

$0.820

100+ parts

$0.740

1k+ parts

$0.660

10k+ parts

-

18,000

$0.820

$0.740

$0.660

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Nova Conductors

Japan . 80 parts In-Stock

1+ parts

$0.980

100+ parts

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80

$0.980

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TME

Poland . 144 parts In-Stock

1+ parts

$1.340

100+ parts

$0.980

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144

$1.340

$0.980

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Vyrian

USA . 1,094 parts In-Stock

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1,094

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IBS Electronics

USA . 1,085 parts In-Stock

1+ parts

-

100+ parts

$1.597

1k+ parts

$1.443

10k+ parts

$1.429

1,085

-

$1.597

$1.443

$1.429

Maverick Electronics, Inc.

USA . 251 parts In-Stock

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251

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,298 parts In-Stock

1+ parts

$0.540

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3,298

$0.540

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Continental Prestige Electronics

USA . 352 parts In-Stock

1+ parts

$0.811

100+ parts

$0.614

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352

$0.811

$0.614

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Argo Parts USA

USA . 538 parts In-Stock

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$0.980

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538

$0.980

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QualityLine Systems

Poland . 6,159 parts In-Stock

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6,159

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Marpe Global Electronics

Taiwan . 4,839 parts In-Stock

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4,839

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Lixinc

USA . 3,988 parts In-Stock

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3,988

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XL Components Corporation

Australia . 3,585 parts In-Stock

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3,585

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Perfect Parts

USA . 2,617 parts In-Stock

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2,617

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Netroflash

USA . 500 parts In-Stock

1+ parts

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100+ parts

$0.960

1k+ parts

$0.931

10k+ parts

$0.911

500

-

$0.960

$0.931

$0.911

Overview

Elevate your electronic designs with the TN0604N3-G Small Signal Field Effect Transistor by Microchip Technology. This high-quality N-CHANNEL transistor boasts a single configuration with a built-in diode, ideal for switching applications. With a minimum DS Breakdown Voltage of 40V and a maximum Drain Current of 1A, this transistor offers superior performance and reliability. Whether you're working on amplifiers, power management systems, or LED lighting, this FET is the perfect choice for your project. Trust in Microchip Technology's expertise and invest in the TN0604N3-G for unmatched value and efficiency in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and control, enhancing the performance of the transistor in circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space, making the transistor ideal for compact electronic devices.

Transistor Application: SWITCHING

Enables fast switching speeds and low power consumption, making it suitable for high-frequency applications.

Minimum DS Breakdown Voltage: 40 V

Provides a safety margin for voltage spikes, ensuring the longevity of the transistor in different operating conditions.

Package Shape: ROUND

Allows for easy installation and compatibility with various mounting options, enhancing the versatility of the transistor.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection to PCBs, making the transistor user-friendly for assembly processes.

Operating Mode: ENHANCEMENT MODE

Offers low off-state leakage current and high input impedance, improving the efficiency of the transistor in operation.

Maximum Drain Current (Abs) (ID): 1 A

Supports high current flow, making the transistor suitable for applications requiring a larger output.

No. of Terminals: 3

Provides necessary connections for power, control, and ground, ensuring compatibility with various circuit configurations.

Maximum Power Dissipation (Abs): 0.74 W

Allows for continuous operation without overheating, enhancing the reliability of the transistor in different environments.

Package Style (Meter): CYLINDRICAL

Provides a compact form factor that is easy to integrate into space-constrained designs, making it a versatile choice for various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and efficiency, making the transistor suitable for demanding electronic circuits.

Maximum Power Dissipation Ambient: 0.74 W

Ensures stable performance even in high-temperature environments, making the transistor reliable for extended use.

Maximum Operating Temperature: 150 °C

Allows for operation in a wide range of temperature conditions, making the transistor versatile for different applications.

Transistor Element Material: SILICON

Provides excellent electrical properties and reliability, making the transistor a durable choice for long-term use.

Minimum Operating Temperature: -55 °C

Ensures reliable performance even in low-temperature environments, making the transistor suitable for a variety of applications.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant finish, enhancing the durability of the transistor in different operating conditions.

Maximum Drain Current (ID): 0.7 A

Supports high current flow with minimal power loss, making the transistor efficient for various applications.

Maximum Drain-Source On Resistance: 0.75 ohm

Offers low resistance and power dissipation, improving the efficiency of the transistor in circuit designs.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering, making the transistor easy to integrate into electronic assemblies.

Maximum Feedback Capacitance (Crss): 50 pF

Provides stable and efficient performance in high-frequency applications, making the transistor suitable for demanding circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) TN0604N3-G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Additional Features:

HIGH INPUT IMPEDANCE

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

.7 A

Maximum Drain-Source On Resistance:

.75 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.74 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN0604N3-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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