Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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AO3402
Alpha & Omega Semiconductor
AO3402 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage and 4A ID. Ideal for switching applications, it features a built-in diode, 0.052 ohm RDS(on), and 25pF Crss. The GULL WING terminal form and small outline package make it suitable for surface mount designs.
SINGLE WITH BUILT-IN DIODE
30 V
4 A
.052 ohm
METAL-OXIDE SEMICONDUCTOR
25 pF
R-PDSO-G3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
YES
GULL WING
DUAL
SWITCHING
SILICON
DMN4020LFDE-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Peak Reflow Temperature (C): 260; Additional Features: HIGH RELIABILITY;
HIGH RELIABILITY
DRAIN
40 V
6.7 A
.02 ohm
S-PDSO-N3
e4
150 Cel
-55 Cel
SQUARE
260
2.03 W
AEC-Q101
NICKEL PALLADIUM GOLD
NO LEAD
30
DMN53D0LW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Maximum Feedback Capacitance (Crss): 3.9 pF; Transistor Element Material: SILICON;
50 V
.25 A
2 ohm
3.9 pF
e3
.42 W
MATTE TIN
TF414T5G
Onsemi
TF414T5G by Onsemi is a N-CHANNEL FET with 0.1W power dissipation, suitable for surface mount applications. With a max operating temp of 150 °C and peak reflow temp of 260°C, it features junction technology and nickel palladium gold terminal finish. Ideal for small signal amplification in electronic circuits.
JUNCTION
.1 W
Other Transistors
BS107PSTOA
Zetex Plc
BS107PSTOA by Zetex Plc is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 0.12A and 23 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. The transistor's PLASTIC/EPOXY body, RECTANGULAR shape, and WIRE terminals make it suitable for various electronic designs.
SINGLE
200 V
.12 A
23 ohm
R-PSIP-W3
200 Cel
IN-LINE
Not Qualified
NO
WIRE
10
BS107PSTOB
BS107PSTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. With 200V DS Breakdown Voltage, it has 23 ohm Drain-Source On Resistance and 0.12A Drain Current. Its PLASTIC/EPOXY body, ENHANCEMENT MODE operation, and SILICON material make it ideal for various electronic circuits.
ZVNL120ASTOB
ZVNL120ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 200V DS Breakdown Voltage, 0.18A ID, and 10Ω RDS(on). With SILICON element material and ENHANCEMENT MODE operation, it operates up to 200°C making it suitable for various electronic circuits.
.18 A
10 ohm
ZVN4424ASTOA
ZVN4424ASTOA by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A Drain Current, and 6ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR tech.
240 V
.26 A
6 ohm
ZVN4424ASTOB
ZVN4424ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 0.26A ID, and 6Ω Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max temp of 200°C and uses METAL-OXIDE SEMICONDUCTOR technology.
ZVN0545ASTOB
ZVN0545ASTOB by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. Features include 450V DS Breakdown Voltage, 50Ω Drain-Source On Resistance, and 0.09A Max Drain Current. Ideal for high voltage switching circuits due to its ENHANCEMENT MODE operation and SILICON material.
450 V
.09 A
50 ohm
ZVN4206ASTOA
Zetex Plc's ZVN4206ASTOA is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. Featuring SINGLE configuration, it has 0.6A ID and 1.5 ohm RDS(on), operating in ENHANCEMENT MODE at up to 200°C. Package style: IN-LINE, terminal finish: MATTE TIN, making it suitable for various electronic designs.
60 V
.6 A
1.5 ohm
ZVN4206ASTOB
Zetex Plc's ZVN4206ASTOB is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Featuring single configuration, 0.6A ID, and 1.5Ω RDS(on), it operates in enhancement mode up to 200°C. Its rectangular package with wire terminals makes it suitable for various electronic devices.
ZVP2110ASTOA
ZVP2110ASTOA by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.23A ID, and 8Ω RDS(ON). With ENHANCEMENT MODE operation and SILICON material, it operates up to 200°C making it ideal for various electronic circuits.
100 V
.23 A
8 ohm
P-CHANNEL
ZVP2110ASTOB
ZVP2110ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 8Ω Drain-Source Resistance, and 0.23A Drain Current. With SILICON element material and ENHANCEMENT MODE operation, it's ideal for various electronic circuits.
ZVP4424ASTOB
ZVP4424ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 240V DS Breakdown Voltage, 15 ohm Drain-Source Resistance, and 0.2A Drain Current. With ENHANCEMENT MODE operation and SILICON material, it operates at up to 200°C.
.2 A
15 ohm
ZVP3306ASTOB
ZVP3306ASTOB by Zetex Plc is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 14 ohm Drain-Source On Resistance, 0.16A Drain Current, and operates at up to 200°C. The transistor has a RECTANGULAR shape, WIRE terminals, and uses METAL-OXIDE SEMICONDUCTOR technology.
.16 A
14 ohm
ZVP3306ASTZ
ZVP3306ASTZ by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 14 ohm Drain-Source On Resistance, and 0.16A Drain Current. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it's ideal for various electronic circuits requiring efficient switching capabilities.
ZVP2106ASTOB
ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.
.28 A
5 ohm
TPIC2322LD
Texas Instruments
TPIC2322LD by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 3 ELEMENTS with BUILT-IN DIODE, 0.75A Max Drain Current, and 0.7 ohm Drain-Source On Resistance. With a 60V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at up to 150°C.
LOGIC LEVEL COMPATIBLE
ISOLATED
COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE
.75 A
.7 ohm
40 pF
MS-012AA
R-PDSO-G8
8
.95 W
FET General Purpose Power
TPS1101DR
TPS1101DR by Texas Instruments is a P-CHANNEL FET for switching applications. It features a min DS Breakdown Voltage of 15V, Max Drain Current of 2.3A, and Max Power Dissipation of 0.791W. With a package style of SMALL OUTLINE and operating temperature range from -40 to 150 °C, it is ideal for enhancement mode switching in various electronic devices.
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
15 V
.62 A
2.3 A
.19 ohm
-40 Cel
.791 W
BSS138/L99Z
National Semiconductor
BSS138/L99Z by National Semiconductor is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.22A ID, and 6 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
.22 A
10 pF
TO-236AB
2N7002/L99Z
2N7002/L99Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, with 0.115A ID and 7.5Ω RDS(on). The transistor operates b/w -55°C to 150°C, featuring a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology.
.115 A
7.5 ohm
5 pF
.2 W
NDS7002A/D87Z
NDS7002A/D87Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features GULL WING terminals in PLASTIC/EPOXY package style.
-65 Cel
.3 W
2SJ600-Z-E1-AZ
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
25 A
45 W
2SJ601(0)-Z-E1-AZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Drain Current (Abs) (ID): 36 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
36 A
.046 ohm
TO-252
R-PSSO-G2
2
65 W
2SK3386(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
34 A
40 W
2SK3402(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
UPA1911ATE-T1-A
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-609 Code: e6;
20 V
2.5 A
.12 ohm
R-PDSO-G6
e6
6
2 W
TIN BISMUTH
UPA1917TE-T1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 6 A;
6 A
UPA1919TE-T1-AT
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Terminals: 6; Transistor Element Material: SILICON;
.084 ohm
UPA1952TE-T1-A
P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Maximum Drain Current (ID): 2 A; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;
2 A
1.15 W
UPA677TB-T1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .35 A; Terminal Finish: TIN BISMUTH; Maximum Drain Current (ID): .35 A;
.35 A
UPA679TB-T1-A
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e6; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
N-CHANNEL AND P-CHANNEL
NTMFD4C20NT3G
NTMFD4C20NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 9.1A ID, and 0.0108 ohm RDS(on). Ideal for SWITCHING applications, it features SERIES CONNECTED configuration in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
DRAIN SOURCE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
9.1 A
.0108 ohm
125 pF
R-PDSO-F8
1.88 W
TIN
FLAT
6HP04MH-TL-W
6HP04MH-TL-W by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode and resistor, suitable for surface mount applications. With 0.37A ID and 4.2Ω RDS(on), it's ideal for small outline packages in enhancement mode circuits.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
.37 A
4.2 ohm
4.1 pF
R-PDSO-F3
.6 W
DMG6301UDW-7
DMG6301UDW-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 0.24A, and operating temperature range from -55 to 150°C. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
25 V
.24 A
4 ohm
.37 W
DMN30H14DLY-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-F3;
300 V
.21 A
R-PSSO-F3
DMP1022UFDF-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Additional Features: HIGH RELIABILITY; Package Shape: SQUARE;
12 V
9.5 A
.026 ohm
467 pF
S-PDSO-N6
2.1 W
NTMFS4847NAT1G
NTMFS4847NAT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 11.5A ID, and 0.0062 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE, suitable for surface mount technology.
11.5 A
.0062 ohm
R-PDSO-F5
5
2SJ598(0)-Z-E1-AZ
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JEDEC-95 Code: TO-252; Case Connection: DRAIN;
12 A
50 pF
1 W
23 W
2SJ598-AY
The Renesas Electronics 2SJ598-AY is a P-CHANNEL FET with 60V DS breakdown voltage and 12A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has a max power dissipation of 23W and can withstand temperatures up to 150°C.
TO-251
R-PSIP-T3
THROUGH-HOLE
2SJ621-T1B-AT
2SJ621-T1B-AT by Renesas Electronics is a P-CHANNEL FET with 3.5A ID, 0.062 ohm RDS(on), and 12V DS breakdown voltage. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max temp of 150°C.
3.5 A
.062 ohm
1.25 W
2SJ624-T1B-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
4.5 A
2SJ648-T1-A
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e6;
.4 A
2SK3385(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
30 A
36 W
2SK3408-T1B-AT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 43 V;
43 V
1 A
.26 ohm
30 pF
2SK3483(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 28 A;
28 A
2SK3484(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 16 A;
16 A
30 W
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