Loading...

TPIC2322LD

Texas Instruments

TPIC2322LD by Texas Instruments

TPIC2322LD by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 3 ELEMENTS with BUILT-IN DIODE, 0.75A Max Drain Current, and 0.7 ohm Drain-Source On Resistance. With a 60V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at up to 150°C.

Median Price

$1.313

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 330 parts In-Stock

1+ parts

-

100+ parts

$1.270

1k+ parts

$1.050

10k+ parts

$0.940

330

-

$1.270

$1.050

$0.940

DigiKey

USA . 330 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.590

10k+ parts

-

330

-

-

$1.590

-

Verical

USA . 330 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.313

10k+ parts

$1.175

330

-

-

$1.313

$1.175

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 702 parts In-Stock

1+ parts

$0.988

100+ parts

-

1k+ parts

-

10k+ parts

-

702

$0.988

-

-

-

Vyrian

USA . 3,835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,835

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 330 parts In-Stock

1+ parts

$0.880

100+ parts

-

1k+ parts

-

10k+ parts

-

330

$0.880

-

-

-

Semicontronic

India . 116 parts In-Stock

1+ parts

$0.880

100+ parts

$0.858

1k+ parts

$0.854

10k+ parts

-

116

$0.880

$0.858

$0.854

-

Corphita

USA . 2,283 parts In-Stock

1+ parts

$0.936

100+ parts

-

1k+ parts

-

10k+ parts

-

2,283

$0.936

-

-

-

Corohmni

South Africa . 96 parts In-Stock

1+ parts

$1.040

100+ parts

-

1k+ parts

-

10k+ parts

-

96

$1.040

-

-

-

Parana Technologies

USA . 1,095 parts In-Stock

1+ parts

$1.492

100+ parts

-

1k+ parts

$2.164

10k+ parts

-

1,095

$1.492

-

$2.164

-

DigiPath Technology Company

USA . 2,235 parts In-Stock

1+ parts

$1.642

100+ parts

$1.511

1k+ parts

-

10k+ parts

-

2,235

$1.642

$1.511

-

-

ChromeModa Solutions

Germany . 2,978 parts In-Stock

1+ parts

$1.676

100+ parts

$1.374

1k+ parts

-

10k+ parts

-

2,978

$1.676

$1.374

-

-

IDEA Electronic Components Group

UK . 1,106 parts In-Stock

1+ parts

$1.676

100+ parts

-

1k+ parts

$1.508

10k+ parts

-

1,106

$1.676

-

$1.508

-

Microchip USA

USA . 110 parts In-Stock

1+ parts

$6.500

100+ parts

-

1k+ parts

-

10k+ parts

-

110

$6.500

-

-

-

Perfect Parts

USA . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Overview

Elevate your electronic designs with the TPIC2322LD by Texas Instruments, a top-tier manufacturer renowned for quality and innovation. This small signal field-effect transistor offers unmatched performance in switching applications, thanks to its N-channel configuration and built-in diode elements. With a maximum DS breakdown voltage of 60V and a power dissipation of 0.95W, this enhancement mode transistor delivers superior reliability and efficiency. Whether you're designing consumer electronics or industrial equipment, the TPIC2322LD provides the value and benefits you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and insulation for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors have lower on-state resistance and higher efficiency compared to P-Channel transistors, making them ideal for switching applications.

Configuration: COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

The built-in diode helps protect the transistor from voltage spikes and enhances its performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high efficiency and fast response times.

Surface Mount: YES

Allows for easy and convenient mounting onto circuit boards, saving space and simplifying the overall design.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without sustaining damage, increasing its overall reliability.

Maximum Drain Current (Abs) (ID): 0.75 A

Capable of handling high drain currents, making it suitable for applications that require a significant amount of power.

Maximum Power Dissipation (Abs): 0.95 W

Can safely dissipate heat generated during operation, preventing overheating and ensuring consistent performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environments and high temperature conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC2322LD attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.75 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

3

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.95 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC2322LD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 19