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TPIC5223LDR

Texas Instruments

TPIC5223LDR by Texas Instruments

TPIC5223LDR by Texas Instruments is a N-CHANNEL FET with 2 elements and built-in diode for switching applications. It has a min DS breakdown voltage of 60V, max drain current of 1A, and max operating temp of 150°C. This small outline package FET features gull wing terminals and isolated case connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,675 parts In-Stock

1+ parts

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3,675

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Vyrian

USA . 2,196 parts In-Stock

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2,196

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Distributors (Availability)

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Parana Technologies

USA . 1,646 parts In-Stock

1+ parts

$0.514

100+ parts

-

1k+ parts

$1.632

10k+ parts

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1,646

$0.514

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$1.632

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DigiPath Technology Company

USA . 304 parts In-Stock

1+ parts

$0.565

100+ parts

$0.520

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-

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304

$0.565

$0.520

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ChromeModa Solutions

Germany . 4,462 parts In-Stock

1+ parts

$0.577

100+ parts

$0.473

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-

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4,462

$0.577

$0.473

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IDEA Electronic Components Group

UK . 1,745 parts In-Stock

1+ parts

$0.577

100+ parts

-

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$0.519

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1,745

$0.577

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$0.519

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AZTECH Wire

Italy . 839 parts In-Stock

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$6.128

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839

$6.128

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Semicontronic

India . 831 parts In-Stock

1+ parts

$18.050

100+ parts

$17.599

1k+ parts

$17.508

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831

$18.050

$17.599

$17.508

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One Stop Electronics

USA . 1,627 parts In-Stock

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$55.050

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1,627

$55.050

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Corphita

USA . 289 parts In-Stock

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289

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Corohmni

South Africa . 254 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the TPIC5223LDR by Texas Instruments. Designed with quality and precision, this Small Signal Field Effect Transistor offers unparalleled performance for switching applications. With a maximum DS breakdown voltage of 60V and a maximum drain current of 1A, this N-CHANNEL transistor delivers reliable power management in a compact package. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your designs with the TPIC5223LDR and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity, making them efficient for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for more flexibility in circuit design and the built-in diode provides protection against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Surface mount technology saves space and allows for automated assembly, making it ideal for compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages, adding to its versatility.

Maximum Operating Temperature: 150 °C

Capable of operating at temperatures up to 150°C, making it suitable for a wide range of environments.

Maximum Drain Current (ID): 1 A

The high maximum drain current of 1 A allows for handling higher current loads, improving overall performance.

Maximum Drain-Source On Resistance: 0.43 ohm

The low drain-source on resistance of 0.43 ohm results in minimal power loss and improved efficiency.

Maximum Power Dissipation Ambient: 0.95 W

With a maximum power dissipation of 0.95 W, this transistor can handle higher power levels without overheating.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC5223LDR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ESD PROTECTED, LOGIC LEVEL COMPATIBLE

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.43 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.95 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC5223LDR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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