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TPIC1505DWR

Texas Instruments

TPIC1505DWR by Texas Instruments

TPIC1505DWR by Texas Instruments is a N-CHANNEL FET with 1A max drain current, 0.48 ohm max on resistance, and 2.86W power dissipation. Ideal for amplifier applications, it operates in enhancement mode with 24 terminals and GULL WING shape for surface mount assembly.

Median Price

$1.525

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 31,000 parts In-Stock

1+ parts

-

100+ parts

$1.360

1k+ parts

$1.220

10k+ parts

$1.140

31,000

-

$1.360

$1.220

$1.140

DigiKey

USA . 31,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.790

10k+ parts

-

31,000

-

-

$1.790

-

Verical

USA . 31,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.525

10k+ parts

$1.425

31,000

-

-

$1.525

$1.425

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,273 parts In-Stock

1+ parts

$1.444

100+ parts

-

1k+ parts

-

10k+ parts

-

1,273

$1.444

-

-

-

Vyrian

USA . 776 parts In-Stock

1+ parts

$1.520

100+ parts

-

1k+ parts

-

10k+ parts

-

776

$1.520

-

-

-

DigiKey Marketplace

USA . 31,000 parts In-Stock

1+ parts

-

100+ parts

$1.580

1k+ parts

-

10k+ parts

-

31,000

-

$1.580

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,138 parts In-Stock

1+ parts

$1.368

100+ parts

-

1k+ parts

-

10k+ parts

-

1,138

$1.368

-

-

-

Parana Technologies

USA . 750 parts In-Stock

1+ parts

$1.434

100+ parts

-

1k+ parts

$2.127

10k+ parts

-

750

$1.434

-

$2.127

-

Component Stockers USA

USA . 31,967 parts In-Stock

1+ parts

$1.550

100+ parts

$1.460

1k+ parts

$1.320

10k+ parts

$1.320

31,967

$1.550

$1.460

$1.320

$1.320

DigiPath Technology Company

USA . 1,726 parts In-Stock

1+ parts

$1.579

100+ parts

$1.452

1k+ parts

-

10k+ parts

-

1,726

$1.579

$1.452

-

-

ChromeModa Solutions

Germany . 1,728 parts In-Stock

1+ parts

$1.611

100+ parts

$1.321

1k+ parts

-

10k+ parts

-

1,728

$1.611

$1.321

-

-

IDEA Electronic Components Group

UK . 658 parts In-Stock

1+ parts

$1.611

100+ parts

-

1k+ parts

$1.450

10k+ parts

-

658

$1.611

-

$1.450

-

Microchip USA

USA . 2,167 parts In-Stock

1+ parts

$9.490

100+ parts

-

1k+ parts

-

10k+ parts

-

2,167

$9.490

-

-

-

Kepictronics

USA . 7,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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7,700

-

-

-

-

Overview

Unleash the power of innovation with the TPIC1505DWR by Texas Instruments, a high-quality Small Signal Field Effect Transistor that offers unparalleled performance and reliability. Manufactured by industry leader Texas Instruments, this N-CHANNEL transistor is ideal for amplifier applications and features a complex configuration for maximum efficiency. With a compact design and cutting-edge technology, this transistor provides customers with exceptional value, benefits, and advantages. Experience superior quality and seamless operation with the TPIC1505DWR, setting new standards in the field of electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel configuration offers excellent performance in amplification applications.

Configuration: COMPLEX

Complex configuration allows for versatile use in different circuit designs.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle high voltage applications.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and space-saving design for electronic devices.

Terminal Form: GULL WING

Gull wing terminals offer secure and reliable connections for improved performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures efficient and controlled transistor switching.

No. of Elements: 11

With 11 elements, this transistor offers enhanced functionality and performance.

Maximum Drain Current (Abs) (ID): 1.5 A

High maximum drain current allows for reliable operation in demanding applications.

No. of Terminals: 24

24 terminals provide ample connection options for various circuit configurations.

Maximum Power Dissipation (Abs): 2.86 W

High maximum power dissipation ensures the transistor can handle high power loads.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact device designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures.

Transistor Element Material: SILICON

Silicon material ensures stable and consistent performance of the transistor.

Maximum Drain Current (ID): 1 A

High maximum drain current rating ensures reliable operation in various applications.

Maximum Drain-Source On Resistance: 0.48 ohm

Low drain-source on resistance leads to minimal power loss and improved efficiency.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connection for enhanced functionality.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC1505DWR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.48 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-013AD

JESD-30 Code:

R-PDSO-G24

No. of Elements:

11

No. of Terminals:

24

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TPIC1505DWR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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