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TPIC3302DR

Texas Instruments

TPIC3302DR by Texas Instruments

TPIC3302DR by Texas Instruments is an N-channel FET with common drain configuration and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 60V, max drain current of 1A, and max operating temperature of 150°C. This small outline package FET has a max power dissipation of 0.95W and terminal form in gull wing shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,391 parts In-Stock

1+ parts

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7,391

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Digiode

USA . 3,752 parts In-Stock

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3,752

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,252 parts In-Stock

1+ parts

$0.816

100+ parts

-

1k+ parts

$1.789

10k+ parts

-

1,252

$0.816

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$1.789

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DigiPath Technology Company

USA . 1,050 parts In-Stock

1+ parts

$0.899

100+ parts

$0.827

1k+ parts

-

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-

1,050

$0.899

$0.827

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ChromeModa Solutions

Germany . 4,680 parts In-Stock

1+ parts

$0.917

100+ parts

$0.752

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4,680

$0.917

$0.752

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IDEA Electronic Components Group

UK . 1,826 parts In-Stock

1+ parts

$0.917

100+ parts

-

1k+ parts

$0.825

10k+ parts

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1,826

$0.917

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$0.825

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AZTECH Wire

Italy . 212 parts In-Stock

1+ parts

$17.460

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212

$17.460

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Semicontronic

India . 1,201 parts In-Stock

1+ parts

$23.050

100+ parts

$22.474

1k+ parts

$22.358

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1,201

$23.050

$22.474

$22.358

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One Stop Electronics

USA . 230 parts In-Stock

1+ parts

$25.050

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230

$25.050

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Ampacity Inc.

Singapore . 851 parts In-Stock

1+ parts

$64.050

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851

$64.050

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Corphita

USA . 4,110 parts In-Stock

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4,110

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Corohmni

South Africa . 362 parts In-Stock

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362

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Overview

Enhance your electronic projects with the TPIC3302DR by Texas Instruments, a high-quality N-channel small signal field effect transistor. With its common drain configuration and built-in diode, this transistor is perfect for switching applications. Texas Instruments is known for its reliability and innovation in semiconductor technology, ensuring that this product delivers superior performance. Whether you're a hobbyist or a professional, the TPIC3302DR offers value, efficiency, and versatility, making it an essential component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

The N-Channel polarity allows for efficient electron flow, making it suitable for various switching applications.

Configuration: COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE

The common drain configuration with 3 elements including a built-in diode provides stable performance and reliability in switching operations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and low power consumption.

Surface Mount: YES

Being surface mountable, this transistor is easy to install and saves space on the PCB, making it ideal for compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle high voltage applications with ease.

Maximum Operating Temperature: 150 °C

Capable of operating at temperatures up to 150°C, this transistor is suitable for a wide range of environments and applications.

Maximum Drain Current (ID): 1 A

With a maximum drain current of 1 A, this transistor can handle high current loads efficiently.

Maximum Drain-Source On Resistance: 0.475 ohm

The low drain-source on resistance of 0.475 ohms ensures minimal power loss and efficient performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC3302DR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.475 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

3

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.95 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC3302DR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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