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TPIC1504DWR

Texas Instruments

TPIC1504DWR by Texas Instruments

TPIC1504DWR by Texas Instruments is a N-CHANNEL FET with 2A max drain current, 0.3 ohm on-resistance, and 2.86W power dissipation. Ideal for amplifier applications due to its small outline package and dual terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,189 parts In-Stock

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Digiode

USA . 2,836 parts In-Stock

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Prism Electronics

USA . 885 parts In-Stock

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885

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Electronic Expediters

USA . 377 parts In-Stock

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377

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Distributors (Availability)

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Parana Technologies

USA . 154 parts In-Stock

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$1.621

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$2.245

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154

$1.621

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DigiPath Technology Company

USA . 2,312 parts In-Stock

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$1.785

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$1.642

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$1.785

$1.642

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ChromeModa Solutions

Germany . 3,706 parts In-Stock

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$1.821

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$1.493

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3,706

$1.821

$1.493

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IDEA Electronic Components Group

UK . 2,210 parts In-Stock

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$1.821

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$1.639

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2,210

$1.821

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One Stop Electronics

USA . 718 parts In-Stock

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$3.050

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718

$3.050

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AZTECH Wire

Italy . 475 parts In-Stock

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$17.248

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475

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Corphita

USA . 4,237 parts In-Stock

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Perfect Parts

USA . 991 parts In-Stock

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Overview

Enhance your electronic projects with the TPIC1504DWR from Texas Instruments. Manufactured with top-notch quality and precision, this N-CHANNEL Small Signal Field Effect Transistor offers high performance in amplifier applications. With its 11 elements and 2A maximum drain current, this transistor provides exceptional reliability and efficiency. Whether you're a hobbyist or a professional, trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Upgrade your designs with the TPIC1504DWR and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and protection for the internal components of the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs tend to have better performance characteristics compared to P-channel FETs, making this transistor a suitable choice for various applications.

Configuration: COMPLEX

The complex configuration allows for advanced functionality and better control over the transistor's operation, making it versatile for different amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized to provide high gain and low noise performance, making it ideal for audio and signal amplification.

Surface Mount: YES

The surface mount capability makes it easier to integrate the transistor onto circuit boards, saving space and enabling automated assembly processes.

Maximum Power Dissipation (Abs): 2.86 W

With a high maximum power dissipation rating, this transistor can handle larger power loads without overheating, ensuring stable performance in demanding applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good reliability and efficiency, making this transistor suitable for high-performance amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function in a wide range of environments without performance degradation, increasing its versatility.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC1504DWR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

.005 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G24

No. of Elements:

11

No. of Terminals:

24

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TPIC1504DWR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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