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TPIC2302DR

Texas Instruments

TPIC2302DR by Texas Instruments

TPIC2302DR by Texas Instruments is an N-channel FET for switching applications. It features a min DS breakdown voltage of 60V, max drain current of 1A, and max power dissipation of 0.95W. With a package style of small outline and Gull Wing terminals, it operates in enhancement mode at up to 150°C ambient temperature.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,372 parts In-Stock

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7,372

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Digiode

USA . 4,510 parts In-Stock

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4,510

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A2Z Electronics, Inc.

USA . 810 parts In-Stock

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810

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Distributors (Availability)

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Parana Technologies

USA . 1,400 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

$1.664

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-

1,400

$0.570

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$1.664

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DigiPath Technology Company

USA . 1,122 parts In-Stock

1+ parts

$0.627

100+ parts

$0.577

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1,122

$0.627

$0.577

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IDEA Electronic Components Group

UK . 2,067 parts In-Stock

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$0.640

100+ parts

-

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$0.576

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2,067

$0.640

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$0.576

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ChromeModa Solutions

Germany . 1,820 parts In-Stock

1+ parts

$0.640

100+ parts

$0.525

1k+ parts

-

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1,820

$0.640

$0.525

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AZTECH Wire

Italy . 478 parts In-Stock

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$6.214

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478

$6.214

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One Stop Electronics

USA . 292 parts In-Stock

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$16.050

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292

$16.050

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Kepictronics

USA . 3,200 parts In-Stock

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Corphita

USA . 935 parts In-Stock

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935

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Overview

Enhance your electronic projects with the TPIC2302DR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers high-quality small signal field effect transistors that are perfect for switching applications. With a common source configuration and built-in diode, this N-channel transistor offers reliable performance and efficient power management. Its compact design and enhanced mode operation make it ideal for a wide range of projects. Trust Texas Instruments to provide you with innovative solutions that elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds, making them suitable for switching applications.

Configuration: COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

The built-in diode allows for efficient freewheeling when switching, and the common source configuration is commonly used in power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

Can handle relatively high voltages, suitable for various applications where higher voltages may be encountered.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer more control over the on/off states, enhancing the efficiency and performance of the transistor.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Drain Current (ID): 1 A

Capable of handling high drain currents, allowing for use in applications that require significant power.

Maximum Drain-Source On Resistance: 0.475 ohm

Low on-resistance ensures minimal power loss and efficient conduction during operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC2302DR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.475 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

3

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.95 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC2302DR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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