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TPIC2322LDR

Texas Instruments

TPIC2322LDR by Texas Instruments

TPIC2322LDR by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 0.75A Drain Current, and 0.7 ohm On Resistance. With a max power dissipation of 0.95W and operating temperature up to 150°C, it's suitable for various small outline surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,244 parts In-Stock

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6,244

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Digiode

USA . 4,798 parts In-Stock

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4,798

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Distributors (Availability)

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Parana Technologies

USA . 958 parts In-Stock

1+ parts

$1.323

100+ parts

-

1k+ parts

$2.062

10k+ parts

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958

$1.323

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$2.062

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DigiPath Technology Company

USA . 54 parts In-Stock

1+ parts

$1.456

100+ parts

$1.340

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-

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54

$1.456

$1.340

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ChromeModa Solutions

Germany . 3,654 parts In-Stock

1+ parts

$1.486

100+ parts

$1.219

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-

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3,654

$1.486

$1.219

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IDEA Electronic Components Group

UK . 2,231 parts In-Stock

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$1.486

100+ parts

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$1.337

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2,231

$1.486

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$1.337

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AZTECH Wire

Italy . 652 parts In-Stock

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$17.015

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652

$17.015

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Semicontronic

India . 143 parts In-Stock

1+ parts

$49.050

100+ parts

$47.824

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$47.578

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143

$49.050

$47.824

$47.578

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One Stop Electronics

USA . 690 parts In-Stock

1+ parts

$63.050

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690

$63.050

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Corohmni

South Africa . 326 parts In-Stock

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326

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Corphita

USA . 268 parts In-Stock

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Overview

Enhance your electronic circuits with the TPIC2322LDR by Texas Instruments, a high-quality N-channel FET perfect for switching applications. Manufactured with precision and expertise, this small outline transistor offers enhanced performance and reliability. Its common source configuration and built-in diode make it versatile for a wide range of uses. Experience the convenience of surface mount installation and the benefits of its 60V breakdown voltage. Upgrade your projects with the TPIC2322LDR and unlock endless possibilities in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient flow of current in one direction, making it suitable for applications requiring high performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast switching speeds and high efficiency.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltages, making it suitable for a wide range of applications where high voltage operation is required.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without compromising performance, making it reliable in various environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC2322LDR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

3

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.95 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC2322LDR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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