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TPIC2302D

Texas Instruments

TPIC2302D by Texas Instruments

TPIC2302D by Texas Instruments is a N-CHANNEL FET with 3 elements & built-in diode, ideal for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.475 ohm Drain-Source On Resistance, and 1A Drain Current. With GULL WING terminals & SMALL OUTLINE package style, it operates in ENHANCEMENT MODE up to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,108 parts In-Stock

1+ parts

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4,108

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Vyrian

USA . 2,195 parts In-Stock

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2,195

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,726 parts In-Stock

1+ parts

$0.808

100+ parts

-

1k+ parts

$1.785

10k+ parts

-

1,726

$0.808

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$1.785

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DigiPath Technology Company

USA . 1,843 parts In-Stock

1+ parts

$0.890

100+ parts

$0.819

1k+ parts

-

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-

1,843

$0.890

$0.819

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ChromeModa Solutions

Germany . 4,395 parts In-Stock

1+ parts

$0.908

100+ parts

$0.745

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-

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4,395

$0.908

$0.745

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IDEA Electronic Components Group

UK . 1,813 parts In-Stock

1+ parts

$0.908

100+ parts

-

1k+ parts

$0.817

10k+ parts

-

1,813

$0.908

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$0.817

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AZTECH Wire

Italy . 620 parts In-Stock

1+ parts

$14.226

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620

$14.226

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Ampacity Inc.

Singapore . 1,208 parts In-Stock

1+ parts

$31.050

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1,208

$31.050

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One Stop Electronics

USA . 1,625 parts In-Stock

1+ parts

$57.050

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1,625

$57.050

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Semicontronic

India . 1,580 parts In-Stock

1+ parts

$62.050

100+ parts

$60.499

1k+ parts

$60.188

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1,580

$62.050

$60.499

$60.188

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Corphita

USA . 510 parts In-Stock

1+ parts

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510

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Corohmni

South Africa . 398 parts In-Stock

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398

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Overview

Upgrade your electronic projects with the TPIC2302D by Texas Instruments. Manufactured with top-notch quality and reliability, this N-channel small signal FET is ideal for switching applications. With its common source configuration and built-in diode, this transistor offers enhanced performance and efficiency. Say goodbye to power limitations and hello to seamless operation with a maximum drain current of 1A. Trust in Texas Instruments for cutting-edge technology that delivers results. Elevate your designs with the TPIC2302D today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have faster switching speeds and lower on-resistance compared to P-channel FETs.

Configuration: COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

Built-in diode provides additional protection, common source configuration is versatile for different circuit designs.

Transistor Application: SWITCHING

Ideal for application in switching circuits due to fast switching speeds.

Surface Mount: YES

Easy to mount on PCBs, saves space and allows for automated assembly.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltage applications with a good safety margin.

No. of Elements: 3

Multiple elements provide flexibility in circuit design and functionality.

Maximum Drain Current (Abs) (ID): 1 A

Can handle higher current loads, suitable for various applications.

Maximum Power Dissipation (Abs): 0.95 W

Efficient power handling capability for reliable performance.

Maximum Drain-Source On Resistance: 0.475 ohm

Low on-resistance minimizes power loss and improves efficiency.

Maximum Feedback Capacitance (Crss): 40 pF

Low feedback capacitance helps reduce potential signal distortion.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC2302D attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.475 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

3

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.95 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC2302D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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