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TPIC1502DWR

Texas Instruments

TPIC1502DWR by Texas Instruments

TPIC1502DWR by Texas Instruments is a N-CHANNEL FET with 1.5A max drain current, ideal for amplifier applications. It has 24 terminals in a small outline package style and operates in enhancement mode up to 125°C. With a max power dissipation of 2.86W, it features metal-oxide semiconductor technology and 0.3 ohm on-resistance for efficient performance.

Median Price

$1.512

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 38,000 parts In-Stock

1+ parts

-

100+ parts

$1.460

1k+ parts

$1.210

10k+ parts

$1.080

38,000

-

$1.460

$1.210

$1.080

DigiKey

USA . 38,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.830

10k+ parts

-

38,000

-

-

$1.830

-

Verical

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.512

10k+ parts

$1.350

20,000

-

-

$1.512

$1.350

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$1.063

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$1.063

-

-

-

Digiode

USA . 4,962 parts In-Stock

1+ parts

$1.130

100+ parts

-

1k+ parts

-

10k+ parts

-

4,962

$1.130

-

-

-

Vyrian

USA . 844 parts In-Stock

1+ parts

$1.190

100+ parts

-

1k+ parts

-

10k+ parts

-

844

$1.190

-

-

-

DigiKey Marketplace

USA . 38,000 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

-

10k+ parts

-

38,000

-

$1.240

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 650 parts In-Stock

1+ parts

$0.979

100+ parts

-

1k+ parts

$1.870

10k+ parts

-

650

$0.979

-

$1.870

-

Corphita

USA . 3,119 parts In-Stock

1+ parts

$1.071

100+ parts

-

1k+ parts

-

10k+ parts

-

3,119

$1.071

-

-

-

DigiPath Technology Company

USA . 240 parts In-Stock

1+ parts

$1.078

100+ parts

$0.992

1k+ parts

-

10k+ parts

-

240

$1.078

$0.992

-

-

ChromeModa Solutions

Germany . 6,336 parts In-Stock

1+ parts

$1.100

100+ parts

$0.902

1k+ parts

-

10k+ parts

-

6,336

$1.100

$0.902

-

-

IDEA Electronic Components Group

UK . 590 parts In-Stock

1+ parts

$1.100

100+ parts

-

1k+ parts

$0.990

10k+ parts

-

590

$1.100

-

$0.990

-

Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$1.148

100+ parts

$1.045

1k+ parts

$0.941

10k+ parts

-

70

$1.148

$1.045

$0.941

-

Microchip USA

USA . 7,226 parts In-Stock

1+ parts

$7.410

100+ parts

-

1k+ parts

-

10k+ parts

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7,226

$7.410

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-

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Assy Fe

Spain . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,000

-

-

-

-

Overview

Unlock the power of innovation with the TPIC1502DWR by Texas Instruments. This small signal Field Effect Transistor (FET) offers unmatched quality and reliability, thanks to its renowned manufacturer. Perfect for amplifier applications, this complex transistor provides enhanced performance in a compact package. With its N-CHANNEL polarity and 1.5 A maximum drain current, this transistor is a game-changer in the field of electronics. Experience the benefits of cutting-edge technology with the TPIC1502DWR and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the sensitive components inside the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in amplifiers and other electronic circuits, offering good performance and efficiency in signal processing.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for signal amplification, ensuring clear and accurate sound reproduction.

Maximum Power Dissipation (Abs): 2.86 W

With a high maximum power dissipation of 2.86W, this transistor can handle heavy loads and operate efficiently without overheating.

Maximum Operating Temperature: 125 °C

The maximum operating temperature of 125°C allows for reliable performance in various environmental conditions, ensuring stability and longevity of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC1502DWR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

.005 A

Maximum Drain-Source On Resistance:

.3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G24

No. of Elements:

11

No. of Terminals:

24

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TPIC1502DWR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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