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TPIC5203D

Texas Instruments

TPIC5203D by Texas Instruments

TPIC5203D by Texas Instruments is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a Max Drain Current of 1.6A, Min DS Breakdown Voltage of 60V, and Max Power Dissipation of 0.962W. This small outline transistor operates in ENHANCEMENT MODE at up to 150°C ambient temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,161 parts In-Stock

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Vyrian

USA . 2,741 parts In-Stock

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2,741

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Distributors (Availability)

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Parana Technologies

USA . 1,790 parts In-Stock

1+ parts

$1.290

100+ parts

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$2.046

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1,790

$1.290

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$2.046

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DigiPath Technology Company

USA . 1,340 parts In-Stock

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$1.421

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$1.307

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1,340

$1.421

$1.307

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ChromeModa Solutions

Germany . 5,212 parts In-Stock

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$1.450

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$1.189

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$1.450

$1.189

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IDEA Electronic Components Group

UK . 1,858 parts In-Stock

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$1.450

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$1.305

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1,858

$1.450

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$1.305

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AZTECH Wire

Italy . 282 parts In-Stock

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$8.619

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282

$8.619

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One Stop Electronics

USA . 512 parts In-Stock

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$28.050

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512

$28.050

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Semicontronic

India . 1,549 parts In-Stock

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$49.050

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$47.824

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$47.578

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1,549

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$47.824

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Ampacity Inc.

Singapore . 309 parts In-Stock

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$57.050

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309

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Corphita

USA . 1,525 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Overview

Looking for a reliable Small Signal Field Effect Transistor? Look no further than the TPIC5203D by Texas Instruments. With a reputation for quality and innovation, Texas Instruments delivers top-of-the-line FETs that are perfect for switching applications. The TPIC5203D offers customers a high level of performance and reliability, with a maximum drain current of 1.6A and a maximum power dissipation of 0.962W. Whether you're designing a new electronics project or replacing old components, the TPIC5203D provides excellent value and benefits that will take your design to the next level. Trust Texas Instruments for all your FET needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and thermal stability to the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower ON resistance and higher electron mobility, making them ideal for efficient switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption, making it suitable for a wide range of electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require a positive voltage applied to the gate terminal to turn the device ON, offering better control and efficiency in switching operations.

Maximum Drain Current (Abs) (ID): 1.6 A

With a high maximum drain current rating, this transistor can handle high current loads effectively, ensuring reliable performance in demanding applications.

Maximum Power Dissipation (Abs): 0.962 W

The low power dissipation rating signifies efficient energy usage and heat management, contributing to the overall reliability and longevity of the transistor.

Maximum Operating Temperature: 150 °C

Operating at a high temperature range of up to 150°C allows this transistor to function in hot environments without performance degradation, making it versatile for various applications.

Maximum Drain-Source On Resistance: 0.31 ohm

The low ON resistance helps minimize power loss and heat generation during operation, enhancing the efficiency and overall performance of the transistor in a circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC5203D attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

ESD PROTECTED

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.6 A

Maximum Drain Current (ID):

1.6 A

Maximum Drain-Source On Resistance:

.31 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

125 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.962 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC5203D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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