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TPIC3322LDR

Texas Instruments

TPIC3322LDR by Texas Instruments

TPIC3322LDR by Texas Instruments is a N-CHANNEL FET with 3 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 60V, 0.75A max drain current, and 0.7 ohm max drain-source resistance. With a package style of small outline and GULL WING terminals, it operates in enhancement mode up to 150°C ambient temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,507 parts In-Stock

1+ parts

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8,507

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Digiode

USA . 2,908 parts In-Stock

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2,908

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,400 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

$1.534

10k+ parts

-

1,400

$0.273

-

$1.534

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DigiPath Technology Company

USA . 100 parts In-Stock

1+ parts

$0.301

100+ parts

$0.277

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-

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100

$0.301

$0.277

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ChromeModa Solutions

Germany . 1,149 parts In-Stock

1+ parts

$0.307

100+ parts

$0.252

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-

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1,149

$0.307

$0.252

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IDEA Electronic Components Group

UK . 900 parts In-Stock

1+ parts

$0.307

100+ parts

-

1k+ parts

$0.276

10k+ parts

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900

$0.307

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$0.276

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Ampacity Inc.

Singapore . 1,315 parts In-Stock

1+ parts

$12.050

100+ parts

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1,315

$12.050

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AZTECH Wire

Italy . 617 parts In-Stock

1+ parts

$17.024

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617

$17.024

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One Stop Electronics

USA . 1,596 parts In-Stock

1+ parts

$33.050

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1,596

$33.050

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Semicontronic

India . 870 parts In-Stock

1+ parts

$65.050

100+ parts

$63.424

1k+ parts

$63.098

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870

$65.050

$63.424

$63.098

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Corphita

USA . 968 parts In-Stock

1+ parts

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968

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Corohmni

South Africa . 107 parts In-Stock

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107

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Overview

Looking for a reliable and high-quality small signal Field Effect Transistor (FET)? Look no further than the TPIC3322LDR by Texas Instruments. With a reputation for excellence in electronic components, Texas Instruments delivers cutting-edge technology to meet your needs. This N-channel FET is perfect for switching applications and offers enhanced performance with a minimum DS breakdown voltage of 60V. Its common drain configuration with built-in diode ensures smooth operation. Trust Texas Instruments to provide unmatched value and performance with the TPIC3322LDR. Elevate your projects with this top-notch FET!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching applications and offer good efficiency and performance.

Configuration: COMMON DRAIN, 3 ELEMENTS WITH BUILT-IN DIODE

Common drain configuration with built-in diode allows for easy switching and control of the transistor in various circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it reliable and efficient in controlling electrical signals.

Surface Mount: YES

Surface mount capability makes installation and PCB assembly easier and more efficient.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages safely.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without damage.

Maximum Drain Current (ID): 0.75 A

Capable of handling a maximum drain current of 0.75A, making it suitable for a variety of applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPIC3322LDR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

No. of Elements:

3

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.95 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPIC3322LDR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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