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2SJ598-AY

Renesas Electronics

2SJ598-AY by Renesas Electronics

The Renesas Electronics 2SJ598-AY is a P-CHANNEL FET with 60V DS breakdown voltage and 12A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has a max power dissipation of 23W and can withstand temperatures up to 150°C.

Median Price

$0.880

Lifecycle Status

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5

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 756 parts In-Stock

1+ parts

-

100+ parts

$0.780

1k+ parts

$0.648

10k+ parts

$0.577

756

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$0.780

$0.648

$0.577

DigiKey

USA . 756 parts In-Stock

1+ parts

-

100+ parts

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$0.980

10k+ parts

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756

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$0.980

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Nova Conductors

Japan . 10 parts In-Stock

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$0.562

100+ parts

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10

$0.562

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Vyrian

USA . 5,740 parts In-Stock

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5,740

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VNN

France . 2,058 parts In-Stock

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2,058

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Ampacity Inc.

Singapore . 521 parts In-Stock

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$0.540

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521

$0.540

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Semicontronic

India . 330 parts In-Stock

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$0.540

100+ parts

$0.526

1k+ parts

$0.524

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-

330

$0.540

$0.526

$0.524

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Argo Parts USA

USA . 1,394 parts In-Stock

1+ parts

$0.562

100+ parts

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$0.545

1,394

$0.562

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$0.545

Continental Prestige Electronics

USA . 200 parts In-Stock

1+ parts

$0.562

100+ parts

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$0.551

200

$0.562

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$0.551

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.562

100+ parts

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$0.534

10k+ parts

$0.523

100

$0.562

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$0.534

$0.523

Microchip USA

USA . 186 parts In-Stock

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$3.965

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186

$3.965

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Overview

Upgrade your electronics with the high-quality 2SJ598-AY P-Channel Field Effect Transistor from Renesas Electronics. Perfect for switching applications, this single transistor with a built-in diode offers reliable performance and a maximum drain current of 12A. With a minimum DS breakdown voltage of 60V and a low maximum power dissipation of 23W, this transistor is a powerhouse in a small package. Trust Renesas Electronics for top-notch components that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Allows for efficient control of current flow in the circuit.

Minimum DS Breakdown Voltage: 60 V

Can handle higher voltages without breakdown, ensuring reliable performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode for reverse current protection.

Maximum Drain Current (Abs) (ID): 12 A

Capable of handling high currents for various applications.

Maximum Power Dissipation (Abs): 23 W

Can dissipate heat effectively, preventing overheating and ensuring long-term reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and efficiency for switching applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation.

Maximum Feedback Capacitance (Crss): 50 pF

Helps in reducing parasitic capacitance effects and improving high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ598-AY attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

12 A

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ598-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Renesas Electronics

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