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2SJ598-S15-AZ

Renesas Electronics

2SJ598-S15-AZ by Renesas Electronics

The Renesas Electronics 2SJ598-S15-AZ is a P-CHANNEL FET with 60V DS breakdown voltage and 12A ID. Ideal for switching applications, it features a built-in diode, 0.19 ohm RDS(on), and 50pF Crss. Operating in enhancement mode at up to 150°C, this transistor has a max power dissipation of 23W in an IN-LINE package style.

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Overview

Unlock the potential of your electronic projects with the 2SJ598-S15-AZ by Renesas Electronics. As a leading manufacturer in the industry, Renesas Electronics delivers top-quality Small Signal Field Effect Transistors that are perfect for switching applications. With a minimum DS breakdown voltage of 60V and a maximum drain current of 12A, this P-Channel FET offers high performance and reliability. Whether you're a hobbyist or a professional, this transistor provides exceptional value and benefits, making it an essential component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where a negative voltage is required in the channel.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient setup with an integrated diode for improved functionality.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltages, making it suitable for various electronic circuits.

Terminal Form: THROUGH-HOLE

Easy to solder and mount onto a PCB for streamlined assembly.

Operating Mode: ENHANCEMENT MODE

Efficient mode of operation with low power consumption.

Maximum Power Dissipation (Abs): 23 W

Can handle high power levels without overheating, ensuring reliability.

Package Style (Meter): IN-LINE

Compact design for space-saving in applications with limited board space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption for energy-efficient operation.

Maximum Power Dissipation Ambient: 1 W

Can dissipate heat effectively in various environmental conditions.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation.

Transistor Element Material: SILICON

Provides reliable and consistent performance over the lifespan of the transistor.

Maximum Drain Current (ID): 12 A

Capable of handling high currents, suitable for power applications.

Maximum Drain-Source On Resistance: 0.19 ohm

Low on-resistance for efficient power transfer and minimal heat generation.

Terminal Position: SINGLE

Simplified connection setup for ease of installation.

Case Connection: DRAIN

Efficient drain connection for improved electrical conductivity.

Maximum Feedback Capacitance (Crss): 50 pF

Low feedback capacitance for stable operation in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ598-S15-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ598-S15-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Renesas Electronics

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