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2SJ598-ZK-E1-AZ

Renesas Electronics

2SJ598-ZK-E1-AZ by Renesas Electronics

The Renesas Electronics 2SJ598-ZK-E1-AZ is a P-CHANNEL FET with 60V DS breakdown voltage and 12A max drain current. Ideal for switching applications, it features a built-in diode, 0.19 ohm max on resistance, and operates in enhancement mode at up to 150°C.

Median Price

$1.012

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,234 parts In-Stock

1+ parts

$1.110

100+ parts

$0.625

1k+ parts

$0.439

10k+ parts

$0.360

5,234

$1.110

$0.625

$0.439

$0.360

Renesas

USA . 2,194 parts In-Stock

1+ parts

$1.520

100+ parts

$0.641

1k+ parts

$0.458

10k+ parts

$0.360

2,194

$1.520

$0.641

$0.458

$0.360

Newark

USA . 2,140 parts In-Stock

1+ parts

$1.570

100+ parts

$0.660

1k+ parts

$0.473

10k+ parts

-

2,140

$1.570

$0.660

$0.473

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DigiKey

USA . 4,995 parts In-Stock

1+ parts

-

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$0.391

4,995

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$0.391

Farnell

UK . 2,141 parts In-Stock

1+ parts

-

100+ parts

$0.484

1k+ parts

$0.343

10k+ parts

$0.280

2,141

-

$0.484

$0.343

$0.280

Element14

Singapore . 2,141 parts In-Stock

1+ parts

-

100+ parts

$0.915

1k+ parts

$0.582

10k+ parts

$0.529

2,141

-

$0.915

$0.582

$0.529

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 42 parts In-Stock

1+ parts

$0.472

100+ parts

-

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-

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42

$0.472

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Vyrian

USA . 2,556 parts In-Stock

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2,556

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VNN

France . 1,266 parts In-Stock

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1,266

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,446 parts In-Stock

1+ parts

$0.422

100+ parts

-

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2,446

$0.422

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Continental Prestige Electronics

USA . 1,267 parts In-Stock

1+ parts

$0.472

100+ parts

-

1k+ parts

-

10k+ parts

$0.463

1,267

$0.472

-

-

$0.463

Argo Parts USA

USA . 645 parts In-Stock

1+ parts

$0.472

100+ parts

-

1k+ parts

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10k+ parts

$0.458

645

$0.472

-

-

$0.458

Semicontronic

India . 2,498 parts In-Stock

1+ parts

$0.650

100+ parts

$0.634

1k+ parts

$0.630

10k+ parts

-

2,498

$0.650

$0.634

$0.630

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A-Z Elektronik GmbH

Germany . 3,300 parts In-Stock

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3,300

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Experience the superior quality and reliability of Renesas Electronics with the 2SJ598-ZK-E1-AZ Small Signal Field Effect Transistor. Ideal for switching applications, this P-CHANNEL transistor boasts a single configuration with a built-in diode, offering enhanced performance and efficiency. With a maximum power dissipation of 23W and a minimum DS breakdown voltage of 60V, this transistor is designed to deliver optimal power management in a compact, surface-mount package. Trust Renesas Electronics to provide cutting-edge technology that meets your needs for high-performance electronic components. Unlock the potential of your projects with the 2SJ598-ZK-E1-AZ transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors offer low on-state resistance and high current carrying capability, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against reverse polarity and simplifies circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability makes installation and PCB design easier and more compact.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without failure.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and space-saving on a PCB.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connection and are suitable for automated soldering processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors can be easily turned on and off, making them ideal for switching applications.

No. of Terminals: 2

Having 2 terminals simplifies circuit design and installation.

Maximum Power Dissipation (Abs): 23 W

High power dissipation capability allows the transistor to handle larger loads and prevent overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and offers a compact design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high efficiency and low power consumption.

Maximum Power Dissipation Ambient: 1 W

Low power dissipation in ambient temperature ensures energy efficiency and prevents overheating.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate in diverse environments.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic components.

Maximum Drain Current (ID): 12 A

High drain current capacity allows the transistor to handle bigger loads and provide efficient switching.

Maximum Drain-Source On Resistance: 0.19 ohm

Low drain-source on resistance ensures minimal power loss and efficient switching performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and circuit design.

Case Connection: DRAIN

Drain connection provides efficient current flow and allows for reliable switching operation.

Maximum Feedback Capacitance (Crss): 50 pF

Low feedback capacitance minimizes the risk of signal distortion and ensures reliable performance in high-frequency switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ598-ZK-E1-AZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ598-ZK-E1-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Renesas Electronics

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