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2SJ518

Renesas Electronics

2SJ518 by Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 60 V;

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

1

In-Stock Inventory

< 1k

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LittleDiode

UK . 4 parts In-Stock

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Distributors (Availability)

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Northwest PG Solutions

USA . 1,971 parts In-Stock

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1,971

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Native Components

USA . 409 parts In-Stock

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409

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Technical Specifications

Small Signal Field Effect Transistors (FET) 2SJ518 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.63 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SJ518 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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