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UPA1952TE-T1-A

Renesas Electronics

UPA1952TE-T1-A by Renesas Electronics

P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Maximum Drain Current (ID): 2 A; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

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Vyrian

USA . 803 parts In-Stock

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803

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$1.205

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$1.086

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60

$1.324

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AZTECH Wire

Italy . 805 parts In-Stock

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$19.490

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805

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Kepictronics

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26,593

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,475 parts In-Stock

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7,475

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3,000

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Technical Specifications

Small Signal Field Effect Transistors (FET) UPA1952TE-T1-A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Trade Compliance

UPA1952TE-T1-A Transistors trade compliance attributes, and parameters.

ECCN

5A002

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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