Loading...

2SK3408-T1B-AT

Renesas Electronics

2SK3408-T1B-AT by Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 43 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 43,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43,500

-

-

-

-

Vyrian

USA . 4,773 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,773

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 821 parts In-Stock

1+ parts

$8.840

100+ parts

-

1k+ parts

-

10k+ parts

-

821

$8.840

-

-

-

Native Components

USA . 623 parts In-Stock

1+ parts

$62.325

100+ parts

-

1k+ parts

-

10k+ parts

$59.832

623

$62.325

-

-

$59.832

Northwest PG Solutions

USA . 1,779 parts In-Stock

1+ parts

$68.558

100+ parts

-

1k+ parts

-

10k+ parts

-

1,779

$68.558

-

-

-

Kepictronics

USA . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306,000

-

-

-

-

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK3408-T1B-AT attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Minimum DS Breakdown Voltage:

43 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.26 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SK3408-T1B-AT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Renesas Electronics

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20