Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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Selected
PCP1405-TD-H
Onsemi
The Onsemi PCP1405-TD-H is a N-CHANNEL FET with 0.6A max drain current and 3.5W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic devices requiring high temperature tolerance.
SINGLE
.6 A
METAL-OXIDE SEMICONDUCTOR
e6
1
150 Cel
260
N-CHANNEL
3.5 W
FET General Purpose Power
YES
TIN BISMUTH
30
NDS331ND87Z
Fairchild Semiconductor
NDS331ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.3A ID, and 0.16 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals.
SINGLE WITH BUILT-IN DIODE
20 V
1.3 A
.16 ohm
R-PDSO-G3
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
Not Qualified
GULL WING
DUAL
SWITCHING
SILICON
ADG467BR
Analog Devices
ADG467BR by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It features 18 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95Ω. The PLASTIC/EPOXY package has GULL WING terminals and can withstand up to 150°C, making it suitable for various electronic devices.
.02 A
95 ohm
R-PDSO-G18
e0
18
240
TIN LEAD
ADG467BRS
ADG467BRS by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It features 20 terminals in a SMALL OUTLINE package with ENHANCEMENT MODE operation. With a max operating temperature of 150°C and 95 ohm on-resistance, it is ideal for high-performance electronic devices.
R-PDSO-G20
20
RK7002T116
ROHM
ROHM RK7002T116 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.115A max drain current. Ideal for switching applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. The transistor has a max power dissipation of 0.225W and can withstand temperatures up to 150°C.
60 V
.115 A
7.5 ohm
5 pF
e1
.225 W
TIN SILVER COPPER
FDV302PD87Z
Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
LOGIC LEVEL COMPATIBLE
25 V
.12 A
10 ohm
P-CHANNEL
.35 W
Other Transistors
PN4303/D26Z
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: AMPLIFIER; Terminal Form: THROUGH-HOLE;
JUNCTION
3 pF
TO-92
O-PBCY-T3
DEPLETION MODE
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BOTTOM
AMPLIFIER
2N5457/D26Z
2N5457/D26Z by National Semiconductor is a N-CHANNEL DEPLETION MODE FET with PLASTIC/EPOXY package. It has a max feedback capacitance of 3 pF and is commonly used for SWITCHING applications.
2N5457/D27Z
2N5457/D27Z by National Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has 3 terminals, PLASTIC/EPOXY body, and 3 pF Crss. Ideal for SWITCHING applications due to its JUNCTION technology and SINGLE configuration in a CYLINDRICAL package.
ZVN3320FTC
Zetex Plc
Zetex Plc's ZVN3320FTC is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.06A ID, and 25 ohm RDS(on). Ideal for small outline applications requiring high temp operation up to 150°C. Suitable for enhancing circuit performance in various electronic devices.
200 V
.06 A
25 ohm
e3
MATTE TIN
ZVP3310FTC
ZVP3310FTC by Zetex Plc is a P-CHANNEL FET with 100V DS Breakdown Voltage, 20 ohm Drain-Source Resistance, and 150°C Operating Temp. Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation and compact SMALL OUTLINE package style.
100 V
.075 A
20 ohm
40
BSS123TC
BSS123TC by Zetex Plc is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 0.17A ID, and 6 ohm RDS(ON). With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it's ideal for small outline surface mount designs.
.17 A
6 ohm
4 pF
WC191
Solitron Devices
The Solitron Devices WC191 is a P-CHANNEL FET with 30V DS Breakdown Voltage. Featuring 2 elements in a DIE package, it has an RDS(on) of 300 ohm and Crss of 1.5 pF. Ideal for applications requiring low feedback capacitance and high breakdown voltage in enhancement mode operation.
SEPARATE, 2 ELEMENTS
30 V
300 ohm
1.5 pF
DIE-6
2
6
DIE
NOT SPECIFIED
458
Nte Electronics
Nte Electronics 458 is a N-CHANNEL FET with DEPLETION MODE operation. It features PLASTIC/EPOXY body, SILICON element, and WIRE terminals in a CYLINDRICAL package. Ideal for low-power applications requiring high-frequency switching capabilities.
LOW NOISE
O-PBCY-W3
WIRE
466
Nte Electronics 466 is a N-CHANNEL FET with METAL body, ideal for SWITCHING applications. Features DEPLETION MODE operation and SILICON element material. Offers low 18 ohm Drain-Source On Resistance in a CYLINDRICAL package with WIRE terminals.
18 ohm
TO-18
O-MBCY-W3
METAL
TPIC1502DW
Texas Instruments
TPIC1502DW by Texas Instruments is a N-CHANNEL FET with 1.5A max drain current, 0.3 ohm max on resistance, and 11 elements. It is used as an amplifier in various applications due to its small outline package style and dual terminal position.
COMPLEX
1.5 A
.005 A
.3 ohm
R-PDSO-G24
11
24
FDV301ND87Z
FDV301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.22A ID and 4 ohm RDS(on). The transistor operates at up to 150°C, making it suitable for various electronic devices.
.22 A
4 ohm
NTMD5836NLR2G
NTMD5836NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 9A Drain Current, and 0.0308 ohm On Resistance. It is used in applications requiring high power dissipation up to 1.5W, operating at temperatures up to 150 °C. Ideal for surface mount designs due to its GULL WING terminals and SMALL OUTLINE package style.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
40 V
9 A
5.7 A
.0308 ohm
R-PDSO-G8
8
1.5 W
TIN
NTMFS4825NFET1G
NTMFS4825NFET1G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 17A max drain current, and 0.002 ohm max on resistance. Ideal for switching applications due to its single configuration with built-in diode. Features small outline package style and operates in enhancement mode up to 150 °C.
DRAIN
17 A
.002 ohm
R-PDSO-F5
5
FLAT
2N7002LT1H
2N7002LT1H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 7.5 ohm RDS(ON). It operates in Enhancement Mode, suitable for small outline applications like power management circuits due to its 115mA ID and built-in diode.
TO-236
-55 Cel
SI2392ADS-T1-GE3
Vishay Intertechnology
SI2392ADS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage and 3.1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.126 ohm max on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
3.1 A
.126 ohm
14 pF
TO-236AB
2.5 W
Matte Tin (Sn)
6HP04CH-TL-W
6HP04CH-TL-W by Onsemi is a P-CHANNEL FET with 0.37A max drain current and 0.6W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features TIN BISMUTH terminal finish.
.37 A
.6 W
FDG6322CD87Z
FDG6322CD87Z by Fairchild Semiconductor is a Small Signal FET with N-CHANNEL and P-CHANNEL polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.41A, it operates in enhancement mode at up to 150°C temperature.
.41 A
R-PDSO-G6
N-CHANNEL AND P-CHANNEL
.3 W
CPH3459-TL-W
CPH3459-TL-W by Onsemi is a N-CHANNEL FET with 0.5A max drain current and 1W max power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic devices requiring efficient power management in compact designs.
.5 A
1 W
FDG6301ND87Z
FDG6301ND87Z by Fairchild Semiconductor is a N-CHANNEL FET for SWITCHING applications. It features 25V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. With GULL WING terminals in a SMALL OUTLINE package, it offers 0.22A Drain Current and 4Ω On Resistance.
FDG6303ND87Z
FDG6303ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a min DS Breakdown Voltage of 25V, Max Power Dissipation of 0.3W, and Max Operating Temperature of 150°C. This small outline transistor has GULL WING terminals and operates in ENHANCEMENT MODE.
.45 ohm
CPH3362-TL-W
CPH3362-TL-W by Onsemi is a P-CHANNEL FET with 100V DS breakdown voltage and 0.7A max drain current. Ideal for small signal applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1W. Suitable for surface mount designs in various electronic circuits.
.7 A
1.7 ohm
7.3 pF
DMG3418L-13
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
HIGH RELIABILITY
4 A
.06 ohm
AEC-Q101
UM5K1NTR
ROHM UM5K1NTR is a N-CHANNEL FET with 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.1A max drain current, and 8 ohm max on resistance. Ideal for common source configuration in small outline packages at up to 150°C operating temp.
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
.1 A
8 ohm
R-PDSO-G5
e2
.15 W
TIN COPPER
ADG467BR-REEL7
ADG467BR-REEL7 by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It has 18 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95 ohm. The package is RECTANGULAR, surface mountable, with MSL level 3 and max temp of 150°C.
ADG467BRS-REEL
ADG467BRS-REEL by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It has 20 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95Ω. The package is RECTANGULAR, surface mountable, with GULL WING terminals made of SILICON material.
DMN2014LHAB-7
DMN2014LHAB-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode for switching applications. It operates in enhancement mode, has a max drain current of 9A, and low on-resistance of 0.013 ohm. With AEC-Q101 standard compliance, it's ideal for automotive electronics requiring high power dissipation up to 1.7W at temperatures ranging from -55 to 150°C.
.013 ohm
145 pF
R-PDSO-N4
e4
4
1.7 W
NICKEL PALLADIUM GOLD
NO LEAD
CPH3462-TL-W
CPH3462-TL-W by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 1A max drain current, and 0.785 ohm RDS(on). Ideal for small outline applications requiring high power dissipation up to 1W at 150°C. Suitable for surface mount designs due to its gull wing terminals and built-in diode configuration.
1 A
.785 ohm
TSM126CXRFG
Taiwan Semiconductor
TSM126CXRFG by Taiwan Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a built-in diode, 800 ohm max RDS(on), and 0.03A max ID. This SMALL OUTLINE transistor operates in DEPLETION MODE and has GULL WING terminals for surface mount assembly.
600 V
.03 A
800 ohm
FDR6580
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;
11 A
11.2 A
.009 ohm
1.8 W
FDR8521L
FDR8521L by Fairchild Semiconductor is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in Enhancement Mode for switching applications, with max ID of 2.9A and RDS(on) of 0.07 ohm. This rectangular package has Gull Wing terminals and is surface mountable.
2.9 A
.07 ohm
FDR6674A
FDR6674A by Fairchild Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11.5A Drain Current, 0.008 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 1.8W and can withstand temperatures up to 150°C.
11.5 A
.008 ohm
PCP1402-TD-H
PCP1402-TD-H by Onsemi is a N-CHANNEL FET with 1.2A max drain current and 3.5W power dissipation. Ideal for applications requiring high temperature tolerance up to 150 °C, such as in surface mount configurations for compact electronic devices.
1.2 A
FDC5614PD87Z
FDC5614PD87Z by Fairchild Semiconductor is a P-CHANNEL FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3A. The transistor operates in enhancement mode and has a max power dissipation of 1.6W at a max operating temperature of 150°C.
3 A
.1 ohm
1.6 W
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
.46 A
1.1 ohm
NTMFS4943NT1G
NTMFS4943NT1G by Onsemi is an N-CHANNEL FET with a 30V DS Breakdown Voltage and 125A IDM. Ideal for SWITCHING applications, it features a 0.011 ohm Drain-Source On Resistance and operates up to 150 °C.
31 mJ
8.3 A
.011 ohm
R-XDSO-F5
UNSPECIFIED
125 A
Tin (Sn)
STS4DPFS30L
STMicroelectronics
STS4DPFS30L by STMicroelectronics is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max operating temperature of 150 °C.
.095 ohm
NTGS3443T1
NTGS3443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 2.2A Drain Current, and 0.065 ohm On Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150 °C.
2.2 A
.065 ohm
235
.5 W
Tin/Lead (Sn80Pb20)
NTGS3441T1
NTGS3441T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 1.65A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating in ENHANCEMENT MODE, it has 0.09 ohm On Resistance and can handle up to 0.5W Power Dissipation at 150 °C.
1.65 A
.09 ohm
NTGS3446T1
NTGS3446T1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 5.8A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
5.8 A
2.5 A
.045 ohm
100 pF
NTMS10P02R2
NTMS10P02R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 4.5A Drain Current, and 0.014 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET is ideal for high-power switching circuits in various electronic devices.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
4.5 A
8.8 A
.014 ohm
1010 pF
.4 W
DMN1032UCB4-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: S-PBGA-B4;
12 V
.038 ohm
47 pF
S-PBGA-B4
SQUARE
GRID ARRAY
BALL
CPH3461-TL-H
CPH3461-TL-H by Onsemi is a N-CHANNEL FET with 250V DS breakdown voltage, 0.35A drain current, and 7.2 ohm on resistance. It is used for switching applications in enhancement mode with built-in diode, operating at up to 150 °C. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.
250 V
.35 A
7.2 ohm
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