Loading...

TSM126CXRFG

Taiwan Semiconductor

TSM126CXRFG by Taiwan Semiconductor

TSM126CXRFG by Taiwan Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a built-in diode, 800 ohm max RDS(on), and 0.03A max ID. This SMALL OUTLINE transistor operates in DEPLETION MODE and has GULL WING terminals for surface mount assembly.

Median Price

$0.162

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 287,194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

287,194

-

-

-

-

Rebound Electronics

UK . 54,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

54,000

-

-

-

-

Ashlea Components Ltd

UK . 11,650 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,650

-

-

-

-

Vyrian

USA . 4,219 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,219

-

-

-

-

Schukat

Germany . 2,600 parts In-Stock

1+ parts

-

100+ parts

$0.162

1k+ parts

$0.122

10k+ parts

$0.097

2,600

-

$0.162

$0.122

$0.097

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

450

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 819 parts In-Stock

1+ parts

$8.360

100+ parts

-

1k+ parts

-

10k+ parts

-

819

$8.360

-

-

-

Argo Parts USA

USA . 2,490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,490

-

-

-

-

Continental Prestige Electronics

USA . 2,289 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,289

-

-

-

-

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Overview

Discover the innovative TSM126CXRFG by Taiwan Semiconductor, a high-quality Small Signal Field Effect Transistor designed for switching applications. With a durable plastic/epoxy package body and N-channel configuration, this single transistor with built-in diode offers reliable performance and a minimum DS breakdown voltage of 600V. Ideal for various electronic devices, this FET provides customers with unmatched value, efficiency, and versatility in their projects. Trust Taiwan Semiconductor for exceptional quality and cutting-edge technology in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and faster switching speeds, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, enhancing the reliability of the transistor in high voltage applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and efficiency.

Surface Mount: YES

The surface mount design allows for easy integration onto circuit boards, saving space and improving assembly efficiency.

Minimum DS Breakdown Voltage: 600 V

With a high breakdown voltage, this transistor is suitable for high voltage applications, providing reliable performance under extreme conditions.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit connections, making it easier to integrate into various system designs.

Maximum Drain Current (ID): 0.03 A

The maximum drain current rating ensures safe operation within specified limits, preventing damage to the transistor and surrounding components.

Maximum Drain-Source On Resistance: 800 ohm

The low on-resistance helps minimize power loss and heat generation, improving the efficiency of the transistor in switching applications.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this transistor is less susceptible to moisture damage during storage and handling.

Technical Specifications

Small Signal Field Effect Transistors (FET) TSM126CXRFG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Taiwan Semiconductor

Specs

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

.03 A

Maximum Drain-Source On Resistance:

800 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TSM126CXRFG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Taiwan Semiconductor

Taiwan Semiconductor was established in 1979 and remains under the direction of its founder and CEO, Arthur Wang. The company has grown from its beginnings as a local manufacturer, to a global enterprise with 1,500 employees. Taiwan Semiconductor is publicly traded on the Stock Exchange Corporation of Taiwan. Recognized for more than 40 years for its core competence in discrete Power Rectifiers, Taiwan Semiconductor has expanded its product portfolio to include Trench Schottkys, MOSFETs, Power Transistors, LED Driver ICs, Analog ICs and ESD Protection Devices, and now provides a complete solution from one source.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.