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ADG467BR

Analog Devices

ADG467BR by Analog Devices

ADG467BR by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It features 18 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95Ω. The PLASTIC/EPOXY package has GULL WING terminals and can withstand up to 150°C, making it suitable for various electronic devices.

Median Price

$4.000

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 37 parts In-Stock

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$4.000

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DF Sales Co.

USA . 37 parts In-Stock

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$4.000

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Forefront Electronics and Design

USA . 2 parts In-Stock

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$17.150

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Vyrian

USA . 7,811 parts In-Stock

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Chip Stock

USA . 3,810 parts In-Stock

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Digiode

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EMSNET

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Prism Electronics

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Resion

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Mil-Aero Solutions, Inc.

USA . 2 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1 parts In-Stock

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Native Components

USA . 574 parts In-Stock

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$0.374

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$0.359

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Northwest PG Solutions

USA . 2,105 parts In-Stock

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$0.412

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$0.363

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$0.412

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Parana Technologies

USA . 1,933 parts In-Stock

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$0.969

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$0.901

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IDEA Electronic Components Group

UK . 268 parts In-Stock

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$1.042

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$0.990

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DigiPath Technology Company

USA . 1,558 parts In-Stock

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$1.626

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$1.560

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AZTECH Wire

Italy . 606 parts In-Stock

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$17.614

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One Stop Electronics

USA . 866 parts In-Stock

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$58.050

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RC Electronics

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S.R.D Solutions

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A-Z Elektronik GmbH

Germany . 1,500 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Upgrade your electronic devices with the high-quality ADG467BR Small Signal Field Effect Transistor by Analog Devices. This N-CHANNEL transistor is perfect for switching applications, offering enhanced performance and reliability. With a durable plastic/epoxy package body material and gull wing terminal form, this transistor ensures seamless integration into your circuit design. Trust in Analog Devices' expertise to deliver top-notch products that meet your needs. Experience the value and benefits of the ADG467BR for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

Allows for versatile use in various circuit applications.

Transistor Application: SWITCHING

Ideal for applications requiring fast switching speeds and efficiency.

Surface Mount: YES

Saves space and allows for easy integration onto PCBs.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering onto PCBs.

Terminal Form: GULL WING

Provides strong mechanical support for the terminals and facilitates soldering.

Operating Mode: ENHANCEMENT MODE

Offers high input impedance and low input current requirements for efficient operation.

No. of Terminals: 18

Provides flexibility in connecting the transistor into complex circuits.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high reliability and performance for the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments without malfunctioning.

Transistor Element Material: SILICON

Well-known for its semiconductor properties that enhance transistor performance.

Terminal Finish: TIN LEAD

Ensures good solderability and reliability of the terminals.

Maximum Drain Current (ID): 0.02 A

Able to handle moderate current loads efficiently.

Maximum Drain-Source On Resistance: 95 ohm

Low on-resistance for minimal power dissipation and heat generation.

Terminal Position: DUAL

Provides flexibility in circuit layout and design.

Moisture Sensitivity Level (MSL): 3

Suitable for use in environments with moderate humidity levels.

Peak Reflow Temperature °C: 240

Can withstand high reflow temperatures during soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) ADG467BR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Analog Devices

Specs

Maximum Drain Current (ID):

.02 A

Maximum Drain-Source On Resistance:

95 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G18

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

18

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ADG467BR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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